View source for 18514010. ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Zhen Yu Guan of Hsinchu (TW)|Zhen Yu Guan of Hsinchu (TW)]][[Category:Zhen Yu Guan of Hsinchu (TW)]]

[[:Category:Hsun-Chung Kuang of Hsinchu City (TW)|Hsun-Chung Kuang of Hsinchu City (TW)]][[Category:Hsun-Chung Kuang of Hsinchu City (TW)]]

==ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18514010 titled 'ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS

==Simplified Explanation==

The patent application describes a method for forming a conductive feature within a dielectric layer on a substrate.

* Form a dielectric layer over a substrate.
* Pattern the dielectric to create an opening.
* Deposit a conductive material within the opening.
* Perform a planarization process to remove excess conductive material.
* Apply an anti-oxidation layer on the conductive feature.
* Remove the anti-oxidation layer from the upper surfaces of the conductive feature.

== Potential Applications ==
* Semiconductor manufacturing
* Microelectronics fabrication
* Integrated circuit production

== Problems Solved ==
* Improving conductivity within dielectric layers
* Enhancing reliability of electronic components
* Reducing oxidation of conductive materials

== Benefits ==
* Increased efficiency in electronic device manufacturing
* Enhanced performance of integrated circuits
* Improved longevity of semiconductor devices


==Original Abstract Submitted==

In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a substrate and patterning the dielectric to form an opening in the dielectric layer. Further, a conductive material is formed within the opening of the dielectric layer. A planarization process is performed to remove portions of the conductive material arranged over the dielectric layer thereby forming a conductive feature within the opening of the dielectric layer. An anti-oxidation layer is formed on upper surfaces of the conductive feature, and then, the anti-oxidation layer is removed.



[[Category:H01L21/3105]]
[[Category:H01L21/02]]
[[Category:H01L21/768]]