View source for 18512682. Semiconductor Device Structure with Interconnect Structure and Method for Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=Semiconductor Device Structure with Interconnect Structure and Method for Forming the Same=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Chun-Hao Kung of Hsinchu (TW)|Chun-Hao Kung of Hsinchu (TW)]][[Category:Chun-Hao Kung of Hsinchu (TW)]]

[[:Category:Chih-Chieh Chang of Zhubei City (TW)|Chih-Chieh Chang of Zhubei City (TW)]][[Category:Chih-Chieh Chang of Zhubei City (TW)]]

[[:Category:Kao-Feng Liao of Hsinchu (TW)|Kao-Feng Liao of Hsinchu (TW)]][[Category:Kao-Feng Liao of Hsinchu (TW)]]

[[:Category:Hui-Chi Huang of Zhubei City (TW)|Hui-Chi Huang of Zhubei City (TW)]][[Category:Hui-Chi Huang of Zhubei City (TW)]]

[[:Category:Kei-Wei Chen of Tainan City (TW)|Kei-Wei Chen of Tainan City (TW)]][[Category:Kei-Wei Chen of Tainan City (TW)]]

==Semiconductor Device Structure with Interconnect Structure and Method for Forming the Same - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18512682 titled 'Semiconductor Device Structure with Interconnect Structure and Method for Forming the Same

==Simplified Explanation==

The method involves forming a semiconductor device structure by:
* Forming a first metal layer on a substrate
* Depositing a dielectric layer over the first metal layer
* Creating a trench in the dielectric layer
* Applying a surface treatment process to the trench's sidewall surface to create a hydrophobic layer
* Depositing a metal material in the trench and over the hydrophobic layer to form a via structure

== Potential Applications ==
This technology can be applied in the semiconductor industry for the manufacturing of advanced electronic devices.

== Problems Solved ==
* Enhances the adhesion of metal material in the trench
* Improves the reliability and performance of semiconductor devices
* Reduces the risk of short circuits and other electrical issues

== Benefits ==
* Increased efficiency in semiconductor device manufacturing
* Enhanced device performance and reliability
* Improved overall quality of electronic products


==Original Abstract Submitted==

A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.



[[Category:H01L21/768]]