View source for 18511808. SEMICONDUCTOR STRUCTURE AND FORMING METHOD AND OPERATING METHOD THEREFOR simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)

=SEMICONDUCTOR STRUCTURE AND FORMING METHOD AND OPERATING METHOD THEREFOR=


==Organization Name==

[[:Category:CHANGXIN MEMORY TECHNOLOGIES, INC.|CHANGXIN MEMORY TECHNOLOGIES, INC.]]


[[Category:CHANGXIN MEMORY TECHNOLOGIES, INC.]]

==Inventor(s)==

[[:Category:Takao Adachi of Hefei (CN)|Takao Adachi of Hefei (CN)]][[Category:Takao Adachi of Hefei (CN)]]

[[:Category:Xiaoguang Wang of Hefei (CN)|Xiaoguang Wang of Hefei (CN)]][[Category:Xiaoguang Wang of Hefei (CN)]]

[[:Category:Deyuan Xiao of Hefei (CN)|Deyuan Xiao of Hefei (CN)]][[Category:Deyuan Xiao of Hefei (CN)]]

[[:Category:Soonbyung Park of Hefei (CN)|Soonbyung Park of Hefei (CN)]][[Category:Soonbyung Park of Hefei (CN)]]

==SEMICONDUCTOR STRUCTURE AND FORMING METHOD AND OPERATING METHOD THEREFOR - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18511808 titled 'SEMICONDUCTOR STRUCTURE AND FORMING METHOD AND OPERATING METHOD THEREFOR

==Simplified Explanation==

The semiconductor structure described in the abstract includes a memory array with storage cells, word line structures, and a common bit line. Each storage cell consists of an active pillar with first and second channel regions, and the word line structures cover these regions in different directions.

* The semiconductor structure includes a memory array with storage cells arranged in two directions.
* Each storage cell has an active pillar with first and second channel regions.
* Word line structures cover the channel regions in different directions.
* A common bit line is connected to all storage cells in the memory array.

== Potential Applications ==
This semiconductor structure could be used in:
* Solid-state drives
* Flash memory devices
* Embedded systems

== Problems Solved ==
This technology helps in:
* Increasing memory density
* Improving data storage and retrieval speed
* Enhancing overall performance of semiconductor devices

== Benefits ==
The benefits of this technology include:
* Higher storage capacity
* Faster data access
* More efficient memory management

== Potential Commercial Applications ==
The potential commercial applications of this technology could be seen in:
* Consumer electronics
* Data centers
* Automotive industry

== Possible Prior Art ==
One possible prior art for this technology could be:
* 3D NAND memory structures

=== Unanswered Questions ===

=== How does this semiconductor structure compare to traditional memory arrays in terms of performance and efficiency? ===
This article does not provide a direct comparison between this semiconductor structure and traditional memory arrays. Further research or testing may be needed to determine the specific advantages and disadvantages of this technology over existing solutions.

=== What are the potential challenges in implementing this semiconductor structure on a large scale for commercial production? ===
The article does not address the potential challenges in large-scale implementation of this semiconductor structure. Factors such as cost, manufacturing complexity, and compatibility with existing technologies could be important considerations in commercial production.


==Original Abstract Submitted==

A semiconductor structure includes: a substrate; a memory array, including a plurality of storage cells arranged in a first direction and a second direction, where each storage cell includes an active pillar including a first channel region and a second channel region that are arranged at intervals in a third direction; a word line structure, including a first word line extending in the first direction and a second word line extending in the second direction, where the first word line covers the first channel regions of the active pillars of the plurality of storage cells that are arranged at intervals in the first direction, and the second word line covers the second channel regions of the active pillars of the plurality of storage cells that are arranged at intervals in the second direction; and a common bit line, electrically connected to all the storage cells in the memory array.



[[Category:H10B12/00]]