View source for 18511720. HETEROJUNCTION SEMICONDUCTOR FLEXIBLE SUBSTRATE, MANUFACTRING METHOD THEREOF, AND ELECTRONIC DEVICE USING THE SAME simplified abstract (KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY)

=HETEROJUNCTION SEMICONDUCTOR FLEXIBLE SUBSTRATE, MANUFACTRING METHOD THEREOF, AND ELECTRONIC DEVICE USING THE SAME=


==Organization Name==

[[:Category:KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY|KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY]]


[[Category:KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY]]

==Inventor(s)==

[[:Category:Seung Hyub Baek of Seoul (KR)|Seung Hyub Baek of Seoul (KR)]][[Category:Seung Hyub Baek of Seoul (KR)]]

[[:Category:Min Seok Kim of Seoul (KR)|Min Seok Kim of Seoul (KR)]][[Category:Min Seok Kim of Seoul (KR)]]

[[:Category:Ji-Soo Jang of Seoul (KR)|Ji-Soo Jang of Seoul (KR)]][[Category:Ji-Soo Jang of Seoul (KR)]]

[[:Category:Sunghoon Hur of Seoul (KR)|Sunghoon Hur of Seoul (KR)]][[Category:Sunghoon Hur of Seoul (KR)]]

[[:Category:Jungho Yoon of Seoul (KR)|Jungho Yoon of Seoul (KR)]][[Category:Jungho Yoon of Seoul (KR)]]

[[:Category:Hyun-Cheol Song of Seoul (KR)|Hyun-Cheol Song of Seoul (KR)]][[Category:Hyun-Cheol Song of Seoul (KR)]]

[[:Category:Seong Keun Kim of Seoul (KR)|Seong Keun Kim of Seoul (KR)]][[Category:Seong Keun Kim of Seoul (KR)]]

[[:Category:Ji-Won Choi of Seoul (KR)|Ji-Won Choi of Seoul (KR)]][[Category:Ji-Won Choi of Seoul (KR)]]

[[:Category:Jin Sang Kim of Wanju-gun (KR)|Jin Sang Kim of Wanju-gun (KR)]][[Category:Jin Sang Kim of Wanju-gun (KR)]]

[[:Category:Chong Yun Kang of Seoul (KR)|Chong Yun Kang of Seoul (KR)]][[Category:Chong Yun Kang of Seoul (KR)]]

==HETEROJUNCTION SEMICONDUCTOR FLEXIBLE SUBSTRATE, MANUFACTRING METHOD THEREOF, AND ELECTRONIC DEVICE USING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18511720 titled 'HETEROJUNCTION SEMICONDUCTOR FLEXIBLE SUBSTRATE, MANUFACTRING METHOD THEREOF, AND ELECTRONIC DEVICE USING THE SAME

==Simplified Explanation==

The patent application describes a heterojunction semiconductor flexible substrate with an epitaxial oxide thin film layer bonded to a thinned silicon substrate using a metal layer, suitable for various electronic and optical devices.

* The substrate consists of a thinned silicon layer bonded to an epitaxial oxide thin film layer using a metal layer.
* The technology enables the use of high-quality epitaxial oxide thin film layers in sensors, actuators, transducers, and MEMS devices.
* The manufacturing method involves hetero-bonding the layers to create a flexible substrate for electronic and optical applications.

== Potential Applications ==
The technology can be applied in sensors, actuators, transducers, and MEMS devices due to the high functionality of the epitaxial oxide thin film layer.

== Problems Solved ==
The technology solves the problem of integrating high-quality epitaxial oxide thin film layers with silicon substrates to create flexible semiconductor substrates for various applications.

== Benefits ==
The benefits of this technology include improved performance of electronic and optical devices, flexibility in design and manufacturing, and potential cost savings in production.

== Potential Commercial Applications ==
The technology can be commercialized in the semiconductor industry for the production of advanced sensors, actuators, transducers, and MEMS devices.

== Possible Prior Art ==
One possible prior art could be the use of traditional bonding methods for integrating oxide thin film layers with silicon substrates in semiconductor devices.

=== Unanswered Questions ===

=== How does the flexibility of the substrate impact the performance of the devices? ===
The flexibility of the substrate can potentially enhance the durability and adaptability of the devices, but the specific effects on performance need to be further studied and analyzed.

=== What are the limitations of using a metal layer for bonding the layers in the substrate? ===
While the metal layer enables hetero-bonding of the layers, there may be concerns regarding thermal expansion, conductivity, and compatibility with different materials that need to be addressed for optimal performance.


==Original Abstract Submitted==

Disclosed is a heterojunction semiconductor flexible substrate in which an epitaxial oxide thin film layer is hetero-bonded to a thinned silicon substrate using a metal layer, a manufacturing method thereof, and the heterojunction semiconductor flexible substrate can be applied to sensor, actuator, transducer, or micro electro mechanical systems (MEMS) device using high functionality of the epitaxial oxide thin film layer of high quality as well as an electronic and/or optical device.



[[Category:H10N39/00]]