View source for 18501672. OPTICAL SENSOR FOR FILM THICKNESS MEASUREMENT (Tokyo Electron Limited)

=OPTICAL SENSOR FOR FILM THICKNESS MEASUREMENT=


==Organization Name==

[[:Category:Tokyo Electron Limited|Tokyo Electron Limited]]


[[Category:Tokyo Electron Limited]]

==Inventor(s)==

[[:Category:Ivan Maleev of Fremont CA (US)|Ivan Maleev of Fremont CA (US)]][[Category:Ivan Maleev of Fremont CA (US)]]

[[:Category:Yan Chen of Fremont CA (US)|Yan Chen of Fremont CA (US)]][[Category:Yan Chen of Fremont CA (US)]]

[[:Category:Holger Tuitje of Fremont CA (US)|Holger Tuitje of Fremont CA (US)]][[Category:Holger Tuitje of Fremont CA (US)]]

[[:Category:Basanta Bhaduri of Fremont CA (US)|Basanta Bhaduri of Fremont CA (US)]][[Category:Basanta Bhaduri of Fremont CA (US)]]

[[:Category:Ching Ling Meng of Sunnyvale CA (US)|Ching Ling Meng of Sunnyvale CA (US)]][[Category:Ching Ling Meng of Sunnyvale CA (US)]]

[[:Category:Da Song of Albany NY (US)|Da Song of Albany NY (US)]][[Category:Da Song of Albany NY (US)]]

[[:Category:Xinkang Tian of Fremont CA (US)|Xinkang Tian of Fremont CA (US)]][[Category:Xinkang Tian of Fremont CA (US)]]

==OPTICAL SENSOR FOR FILM THICKNESS MEASUREMENT==


This abstract first appeared for US patent application 18501672 titled 'OPTICAL SENSOR FOR FILM THICKNESS MEASUREMENT




==Original Abstract Submitted==

A method of film thickness measurement includes illuminating a top layer of a sample in a first region with a broadband illumination beam. The sample includes a substrate and a plurality of semiconductor structures formed between the substrate and the top layer. A first reflectivity spectrum of the sample is obtained in the first region. A first thickness of the top layer in the first region is determined by applying a top-layer model to the first reflectivity spectrum. The top-layer model is substantially unaffected by the plurality of semiconductor structures.



[[Category:G01B11/06]]
[[Category:CPC_G01B11/0625]]