View source for 18501576. SEMICONDUCTOR DEVICE INCLUDING BURIED CONTACT AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICE INCLUDING BURIED CONTACT AND METHOD FOR MANUFACTURING THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Jeonil Lee of Suwon-si (KR)|Jeonil Lee of Suwon-si (KR)]][[Category:Jeonil Lee of Suwon-si (KR)]]

[[:Category:Youngjun Kim of Gwangju (KR)|Youngjun Kim of Gwangju (KR)]][[Category:Youngjun Kim of Gwangju (KR)]]

[[:Category:Jinbum Kim of Seoul (KR)|Jinbum Kim of Seoul (KR)]][[Category:Jinbum Kim of Seoul (KR)]]

==SEMICONDUCTOR DEVICE INCLUDING BURIED CONTACT AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18501576 titled 'SEMICONDUCTOR DEVICE INCLUDING BURIED CONTACT AND METHOD FOR MANUFACTURING THE SAME

==Simplified Explanation==

The semiconductor device described in the patent application includes various structures such as an active pattern, gate structure, bit line structure, buried contact, contact pattern, landing pad, and capacitor structure. The buried contact consists of a first growth portion and a second growth portion that are spaced apart, while the landing pad includes an interposition portion between these growth portions.

* Active pattern connected to gate structure
* Bit line structure connected to active pattern
* Buried contact with first and second growth portions
* Contact pattern covering buried contact
* Landing pad connected to contact pattern
* Capacitor structure connected to landing pad

== Potential Applications ==
This technology could be used in the development of advanced semiconductor devices for various applications such as memory storage, logic circuits, and microprocessors.

== Problems Solved ==
This technology helps in improving the performance and efficiency of semiconductor devices by providing a more reliable and compact structure for connecting different components within the device.

== Benefits ==
- Enhanced connectivity and reliability
- Improved performance and efficiency
- Compact design for space-saving

== Potential Commercial Applications ==
"Advanced Semiconductor Device with Buried Contact and Capacitor Structure" could find applications in the manufacturing of memory chips, processors, and other electronic devices requiring high-speed and reliable performance.

== Possible Prior Art ==
One possible prior art could be the use of buried contacts in semiconductor devices to improve connectivity and reduce resistance between different components. However, the specific configuration of the buried contact with first and second growth portions, along with the interposition portion in the landing pad, may be a novel aspect of this technology.

=== Unanswered Questions ===

=== How does this technology compare to existing semiconductor device structures in terms of performance and reliability? ===
This article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and reliability improvements offered by the described technology.

=== What are the specific manufacturing processes involved in creating the buried contact and capacitor structure in this semiconductor device? ===
The article does not delve into the detailed manufacturing processes or techniques used to fabricate the buried contact and capacitor structure within the semiconductor device.


==Original Abstract Submitted==

A semiconductor device including an active pattern; a gate structure connected to the active pattern; a bit line structure connected to the active pattern; a buried contact connected to the active pattern; a contact pattern covering the buried contact; a landing pad connected to the contact pattern; and a capacitor structure connected to the landing pad, wherein the buried contact includes a first growth portion and a second growth portion spaced apart from each other, and the landing pad includes an interposition portion between the first growth portion and the second growth portion.



[[Category:H10B12/00]]