View source for 18500841. APPARATUS AND METHOD OF MEASURING RELIABILITY FOR FLASH MEMORY MATERIAL THROUGH A CURRENT MEASUREMENT simplified abstract (SK hynix Inc.)

=APPARATUS AND METHOD OF MEASURING RELIABILITY FOR FLASH MEMORY MATERIAL THROUGH A CURRENT MEASUREMENT=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Nam Cheol Jeon of Icheon-si Gyeonggi-do (KR)|Nam Cheol Jeon of Icheon-si Gyeonggi-do (KR)]][[Category:Nam Cheol Jeon of Icheon-si Gyeonggi-do (KR)]]

[[:Category:Hea Jong Yang of Icheon-si Gyeonggi-do (KR)|Hea Jong Yang of Icheon-si Gyeonggi-do (KR)]][[Category:Hea Jong Yang of Icheon-si Gyeonggi-do (KR)]]

[[:Category:Tae Un Youn of Icheon-si Gyeonggi-do (KR)|Tae Un Youn of Icheon-si Gyeonggi-do (KR)]][[Category:Tae Un Youn of Icheon-si Gyeonggi-do (KR)]]

==APPARATUS AND METHOD OF MEASURING RELIABILITY FOR FLASH MEMORY MATERIAL THROUGH A CURRENT MEASUREMENT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18500841 titled 'APPARATUS AND METHOD OF MEASURING RELIABILITY FOR FLASH MEMORY MATERIAL THROUGH A CURRENT MEASUREMENT

==Simplified Explanation==

The patent application describes a reliability measuring apparatus for flash memory using an ONOA current measuring circuit and a reliability indicator generator.

* The apparatus measures an ONOA current by applying a specific voltage to a word line connected to a memory cell.
* The reliability indicator is generated based on the ONOA current measured by the circuit.

== Potential Applications ==
This technology can be applied in:
* Flash memory testing and quality control.
* Memory cell reliability assessment in electronic devices.

== Problems Solved ==
This technology addresses:
* Ensuring the reliability and performance of flash memory.
* Providing a method for accurately measuring ONOA current in memory cells.

== Benefits ==
The benefits of this technology include:
* Improved reliability and longevity of flash memory.
* Enhanced quality control in memory manufacturing processes.

== Potential Commercial Applications ==
A potential commercial application for this technology could be:
* Memory chip manufacturers integrating this apparatus into their production line for quality assurance.

== Possible Prior Art ==
One possible prior art for this technology could be:
* Existing methods for measuring current in memory cells, which may not be as accurate or reliable as the ONOA current measuring circuit.

== Unanswered Questions ==
=== How does this technology compare to other methods of measuring current in memory cells? ===
This article does not provide a direct comparison with other current measuring techniques.

=== What impact could this technology have on the overall reliability of flash memory devices? ===
The article does not delve into the potential impact of this technology on the reliability of flash memory devices.


==Original Abstract Submitted==

A reliability measuring apparatus includes an oxide-nitride-oxide-alumina (ONOA) current measuring circuit configured to measure an ONOA current by applying an ONOA current measuring voltage to a selected word line coupled to a selected memory cell in a flash memory and a reliability indicator generator configured to a reliability indicator using the ONOA current measured through the measuring circuit.



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[[Category:G11C29/12]]