View source for 18488741. FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION simplified abstract (Robert Bosch GmbH)

=FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION=


==Organization Name==

[[:Category:Robert Bosch GmbH|Robert Bosch GmbH]]


[[Category:Robert Bosch GmbH]]

==Inventor(s)==

[[:Category:Daniel Krebs of Aufhausen (DE)|Daniel Krebs of Aufhausen (DE)]][[Category:Daniel Krebs of Aufhausen (DE)]]

[[:Category:Dick Scholten of Stuttgart (DE)|Dick Scholten of Stuttgart (DE)]][[Category:Dick Scholten of Stuttgart (DE)]]

==FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18488741 titled 'FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION

==Simplified Explanation==

The field-effect transistor described in the patent application includes a source layer, a drain layer, a channel layer, and a gate trench. The channel layer has varying doping levels of different types in different regions.

* Source layer doped according to a first type
* Drain layer doped according to a first type
* Channel layer with lower doping of the second type and higher doping of the first type in different regions
* Gate trench extending vertically from the source layer to the drift layer
* Channel layer located vertically between the source layer and the drain layer

== Potential Applications ==
This technology could be applied in:
* Electronics industry for improved transistor performance
* Semiconductor manufacturing for more efficient devices

== Problems Solved ==
This technology addresses issues related to:
* Enhancing transistor efficiency
* Improving overall device performance

== Benefits ==
The benefits of this technology include:
* Increased transistor efficiency
* Enhanced device performance
* Potential cost savings in manufacturing

== Potential Commercial Applications ==
A potential commercial application for this technology could be:
* Integration into electronic devices for improved functionality

== Possible Prior Art ==
One possible prior art for this technology could be:
* Previous patents related to field-effect transistors with similar structures

=== Unanswered Questions ===

== How does this technology compare to existing transistor designs in terms of performance and efficiency? ==
This article does not provide a direct comparison with existing transistor designs to evaluate performance and efficiency.

== What are the specific manufacturing processes involved in producing this field-effect transistor? ==
The article does not detail the specific manufacturing processes involved in producing this field-effect transistor.


==Original Abstract Submitted==

A field-effect transistor. The field-effect transistor includes: a source layer doped according to a first type, a drain layer doped according to a first type, a channel layer located vertically between the source layer doped according to the first type and the drain layer doped according to the first type, and a gate trench which extends vertically from the source layer doped according to the first type to the drift layer doped according to the first type and adjoins the channel layer. The channel layer has, at least on average, a lower doping of the second type and a higher doping of the first type in a region that is more than a specified distance from the gate trench than in a region that is less than the specified distance from the gate trench. Methods for production are also described.



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