View source for 18477439. SURFACE ACOUSTIC WAVE DEVICES WITH HIGH ELECTROMECHANICAL COUPLING COEFFICIENT AND THERMAL STABILITY simplified abstract (SKYWORKS SOLUTIONS, INC.)

=SURFACE ACOUSTIC WAVE DEVICES WITH HIGH ELECTROMECHANICAL COUPLING COEFFICIENT AND THERMAL STABILITY=


==Organization Name==

[[:Category:SKYWORKS SOLUTIONS, INC.|SKYWORKS SOLUTIONS, INC.]]


[[Category:SKYWORKS SOLUTIONS, INC.]]

==Inventor(s)==

[[:Category:Rei Goto of Osaka-Shi (JP)|Rei Goto of Osaka-Shi (JP)]][[Category:Rei Goto of Osaka-Shi (JP)]]

[[:Category:Hironori Fukuhara of Ibaraki-Shi (JP)|Hironori Fukuhara of Ibaraki-Shi (JP)]][[Category:Hironori Fukuhara of Ibaraki-Shi (JP)]]

[[:Category:Benjamin Paul Abbott of Irvine CA (US)|Benjamin Paul Abbott of Irvine CA (US)]][[Category:Benjamin Paul Abbott of Irvine CA (US)]]

==SURFACE ACOUSTIC WAVE DEVICES WITH HIGH ELECTROMECHANICAL COUPLING COEFFICIENT AND THERMAL STABILITY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18477439 titled 'SURFACE ACOUSTIC WAVE DEVICES WITH HIGH ELECTROMECHANICAL COUPLING COEFFICIENT AND THERMAL STABILITY

==Simplified Explanation==

The abstract describes an acoustic wave device designed to generate a surface acoustic wave with a specific wavelength. The device includes a substrate, a piezoelectric layer made of lithium niobate, an interdigital transducer electrode, an overcoat dielectric layer, and possibly a raised frame structure. The piezoelectric layer has a trench in an edge region near the active region where the surface acoustic wave is generated. The overcoat dielectric layer and raised frame structure are positioned accordingly.

* The acoustic wave device generates a surface acoustic wave with a specific wavelength.
* The device includes a substrate, a piezoelectric layer made of lithium niobate, an interdigital transducer electrode, an overcoat dielectric layer, and possibly a raised frame structure.
* The piezoelectric layer has a trench in an edge region near the active region where the surface acoustic wave is generated.
* The overcoat dielectric layer and raised frame structure are positioned accordingly.

== Potential Applications ==
The technology can be applied in telecommunications, sensors, and acoustic wave devices.

== Problems Solved ==
The device helps in generating surface acoustic waves with specific wavelengths efficiently and accurately.

== Benefits ==
The benefits of this technology include precise control over the wavelength of the surface acoustic wave and improved performance in various applications.

== Potential Commercial Applications ==
The technology can be used in mobile devices, medical equipment, and industrial sensors.

== Possible Prior Art ==
Prior art may include similar acoustic wave devices using different materials or configurations.

== Unanswered Questions ==

=== How does the trench in the piezoelectric layer affect the generation of the surface acoustic wave? ===

The abstract mentions a trench in the piezoelectric layer near the active region. It would be interesting to know how this feature impacts the performance of the device.

=== What are the specific advantages of using lithium niobate in the piezoelectric layer? ===

The abstract highlights the use of lithium niobate in the piezoelectric layer. Exploring the advantages of this material choice could provide valuable insights into the technology.


==Original Abstract Submitted==

An acoustic wave device configured to generate a surface acoustic wave having a wavelength L is disclosed. The acoustic wave device can include a substrate, a piezoelectric layer that includes lithium niobate, an interdigital transducer electrode, an overcoat dielectric layer, and/or a raised frame structure. The piezoelectric layer can have a trench in an edge region within 0.25L and 0.45L from an edge of an active region where the surface acoustic wave is generated. The piezoelectric layer is disposed at least partially between the substrate and the interdigital transducer electrode. The overcoat dielectric layer is positioned over the interdigital transducer electrode. The raised frame structure is positioned over the overcoat dielectric layer. The raised frame structure is positioned in an edge region of the active region. The acoustic wave device can include a trap-rich layer over the substrate and an intervening dielectric layer over the trap-rich layer.



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