View source for 18467293. SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS simplified abstract (NEXPERIA B.V.)

=SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS=


==Organization Name==

[[:Category:NEXPERIA B.V.|NEXPERIA B.V.]]


[[Category:NEXPERIA B.V.]]

==Inventor(s)==

[[:Category:Georgio El Zammar of Hamburg (DE)|Georgio El Zammar of Hamburg (DE)]][[Category:Georgio El Zammar of Hamburg (DE)]]

[[:Category:Tim B�ttcher of Hamburg (DE)|Tim B�ttcher of Hamburg (DE)]][[Category:Tim B�ttcher of Hamburg (DE)]]

[[:Category:Massimo Cataldo Mazzillo of Nijmegen (NL)|Massimo Cataldo Mazzillo of Nijmegen (NL)]][[Category:Massimo Cataldo Mazzillo of Nijmegen (NL)]]

[[:Category:Sönke Habenicht of Nijmegen (NL)|Sönke Habenicht of Nijmegen (NL)]][[Category:Sönke Habenicht of Nijmegen (NL)]]

==SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18467293 titled 'SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS

==Simplified Explanation==

The present disclosure pertains to a semiconductor power device, specifically a Silicon Carbide (SiC) Merged P-I-N Schottky (MPS) diode. The device features an active area and a termination area adjacent to the active area. The termination area consists of first rings with a first polarity, and the addition of second rings with a second polarity opposite to the first polarity helps reduce the impact of interface charges on the device's performance.

* Active area and termination area in the semiconductor power device
* First rings with a first polarity in the termination area
* Second rings with a second polarity opposite to the first polarity
* Reduction of interface charges effect on device performance

== Potential Applications ==
The technology can be applied in:
* Power electronics
* Renewable energy systems
* Electric vehicles

== Problems Solved ==
The innovation addresses:
* Improved performance in semiconductor power devices
* Reduction of interface charges impact
* Enhanced efficiency in power applications

== Benefits ==
The benefits of this technology include:
* Higher performance levels
* Increased reliability
* Enhanced efficiency

== Potential Commercial Applications ==
The technology can be utilized in:
* Power supply units
* Solar inverters
* Electric vehicle charging systems

== Possible Prior Art ==
One possible prior art could be the use of different ring structures in semiconductor power devices to mitigate interface charge effects.

=== Unanswered Questions ===

=== How does the addition of second rings with a different polarity reduce the impact of interface charges on the device's performance? ===

The addition of second rings with a different polarity creates a balanced charge distribution, minimizing the influence of interface charges on the device's operation.

=== What specific performance improvements can be expected from the implementation of this technology in semiconductor power devices? ===

The technology can lead to enhanced efficiency, reduced power losses, and improved reliability in semiconductor power devices.


==Original Abstract Submitted==

Aspects of the present disclosure relate to a semiconductor power device, in particular to a Silicon Carbide, SiC, Merged P-I-N Schottky (MPS) diode. The device includes an active area and a termination area adjacent the active area. The termination area includes first rings having a first polarity. By including second rings having a second polarity opposite to the first polarity, a reduced effect of interface charges on the performance of the semiconductor power device can be observed.



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