View source for 18466868. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)

=MAGNETIC MEMORY DEVICE=


==Organization Name==

[[:Category:Kioxia Corporation|Kioxia Corporation]]


[[Category:Kioxia Corporation]]

==Inventor(s)==

[[:Category:Kazuya Sawada of Seoul (KR)|Kazuya Sawada of Seoul (KR)]][[Category:Kazuya Sawada of Seoul (KR)]]

[[:Category:Toshihiko Nagase of Seoul (KR)|Toshihiko Nagase of Seoul (KR)]][[Category:Toshihiko Nagase of Seoul (KR)]]

[[:Category:Kenichi Yoshino of Seongnam-si Gyeonggi-do (KR)|Kenichi Yoshino of Seongnam-si Gyeonggi-do (KR)]][[Category:Kenichi Yoshino of Seongnam-si Gyeonggi-do (KR)]]

[[:Category:Hyungjun Cho of Seoul (KR)|Hyungjun Cho of Seoul (KR)]][[Category:Hyungjun Cho of Seoul (KR)]]

[[:Category:Naoki Akiyama of Seoul (KR)|Naoki Akiyama of Seoul (KR)]][[Category:Naoki Akiyama of Seoul (KR)]]

[[:Category:Takuya Shimano of Seoul (KR)|Takuya Shimano of Seoul (KR)]][[Category:Takuya Shimano of Seoul (KR)]]

[[:Category:Tadaaki Oikawa of Seoul (KR)|Tadaaki Oikawa of Seoul (KR)]][[Category:Tadaaki Oikawa of Seoul (KR)]]

==MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18466868 titled 'MAGNETIC MEMORY DEVICE

==Simplified Explanation==

The magnetic memory device described in the patent application includes an electrode with a magnetoresistance effect element, where the electrode contains a metal element selected from molybdenum (Mo) and ruthenium (Ru).

* Explanation of the patent/innovation:
- The device utilizes a magnetoresistance effect element to store and retrieve data.
- The electrode design with specific metal elements enhances the performance and reliability of the memory device.

* Potential applications of this technology:
- Data storage in electronic devices
- Magnetic sensors for various applications

* Problems solved by this technology:
- Improved data storage capacity and speed
- Enhanced reliability and durability of memory devices

* Benefits of this technology:
- Faster data access and retrieval
- Increased data storage efficiency
- Longer lifespan of memory devices

* Potential commercial applications of this technology (SEO optimized title):
- "Innovative Magnetic Memory Device Applications in Electronics and Sensors"

* Possible prior art:
- Previous magnetic memory devices with different electrode compositions
- Research on magnetoresistance effect elements in memory technology

Questions:

1. How does the specific metal element selection in the electrode contribute to the performance of the magnetic memory device?
2. What are the specific electronic devices or industries that could benefit the most from this magnetic memory technology?


==Original Abstract Submitted==

According to one embodiment, a magnetic memory device includes an electrode, and a magnetoresistance effect element provided on the electrode. The electrode includes a first electrode portion and a second electrode portion provided between the magnetoresistance effect element and the first electrode portion and containing a metal element selected from molybdenum (Mo) and ruthenium (Ru).



[[Category:H10N50/80]]
[[Category:H10B61/00]]
[[Category:H10N50/01]]
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