View source for 18464243. DIRECT WRITING SYSTEM USED FOR ELECTRON BEAM LITHOGRAPHY simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=DIRECT WRITING SYSTEM USED FOR ELECTRON BEAM LITHOGRAPHY=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Cheng-Hsien Chou of Tainan (TW)|Cheng-Hsien Chou of Tainan (TW)]][[Category:Cheng-Hsien Chou of Tainan (TW)]]

[[:Category:Yung-Lung Lin of Taichung (TW)|Yung-Lung Lin of Taichung (TW)]][[Category:Yung-Lung Lin of Taichung (TW)]]

[[:Category:Chun Liang Chen of Tainan (TW)|Chun Liang Chen of Tainan (TW)]][[Category:Chun Liang Chen of Tainan (TW)]]

[[:Category:Kuan-Liang Liu of Pingtung County (TW)|Kuan-Liang Liu of Pingtung County (TW)]][[Category:Kuan-Liang Liu of Pingtung County (TW)]]

[[:Category:Chin-Yu Ku of Hsinchu (TW)|Chin-Yu Ku of Hsinchu (TW)]][[Category:Chin-Yu Ku of Hsinchu (TW)]]

[[:Category:Jong-Yuh Chang of Hsinchu (TW)|Jong-Yuh Chang of Hsinchu (TW)]][[Category:Jong-Yuh Chang of Hsinchu (TW)]]

==DIRECT WRITING SYSTEM USED FOR ELECTRON BEAM LITHOGRAPHY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18464243 titled 'DIRECT WRITING SYSTEM USED FOR ELECTRON BEAM LITHOGRAPHY

==Simplified Explanation==

The abstract describes a deflecting plate with a silicon-on-insulator (SOI) substrate, including multiple deflecting apertures in the device layer and a cavity in the handle substrate.

* The deflecting plate has a silicon-on-insulator (SOI) substrate.
* The SOI substrate consists of an insulator layer with a top surface and a bottom surface.
* A device layer is attached to the insulator layer at the top surface, containing multiple deflecting apertures that extend from top to bottom through the device layer.
* The bottom open end of each deflecting aperture is coplanar with the top surface of the insulator layer.
* A handle substrate is connected to the insulator layer at the bottom surface, featuring a cavity that extends from an open end to a bottom wall, with the bottom wall being coplanar with the top surface of the insulator layer.

== Potential Applications ==
The technology could be used in:
* Microelectromechanical systems (MEMS)
* Optical switches
* Microfluidic devices

== Problems Solved ==
* Precise control of light or fluid flow
* Miniaturization of devices
* Integration of multiple functions in a compact space

== Benefits ==
* Improved efficiency and accuracy in deflecting light or controlling fluid flow
* Enhanced performance of MEMS devices
* Reduction in size and weight of optical switches

== Potential Commercial Applications ==
Optical Switching Technology for Advanced Communication Systems

== Possible Prior Art ==
One possible prior art could be the use of MEMS technology in microfluidic devices for controlling fluid flow.

=== Unanswered Questions ===

=== How does this technology compare to traditional deflecting plates in terms of efficiency and accuracy? ===
This article does not provide a direct comparison between this technology and traditional deflecting plates. Further research or testing may be needed to determine the specific advantages of this innovation.

=== What are the potential limitations or challenges in implementing this technology on a larger scale? ===
The article does not address the scalability of this technology or any challenges that may arise when implementing it on a larger scale. Additional studies or experiments may be required to assess the feasibility of mass production and commercialization.


==Original Abstract Submitted==

A deflecting plate includes a silicon-on-insulator (SOI) substrate. The SOI substrate includes: an insulator layer having a top surface and a bottom surface; a device layer coupled to the insulator layer at the top surface, wherein multiple deflecting apertures are disposed in the device layer, each of which extending from a top open end to a bottom open end through the device layer, and wherein the bottom open end is coplanar with the top surface of the insulator layer; and a handle substrate coupled to the insulator layer at the bottom surface, wherein a cavity is disposed in the handle substrate and extends from a cavity open end to a cavity bottom wall, and wherein the bottom wall is coplanar with the top surface of the insulator layer, such that the bottom open end of each deflecting aperture is exposed to the cavity.



[[Category:H01J37/147]]
[[Category:H01J37/317]]