View source for 18462728. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)

=SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:ROHM CO., LTD.|ROHM CO., LTD.]]


[[Category:ROHM CO., LTD.]]

==Inventor(s)==

[[:Category:Kazuhiro Tamura of Kyoto (JP)|Kazuhiro Tamura of Kyoto (JP)]][[Category:Kazuhiro Tamura of Kyoto (JP)]]

[[:Category:Naoki Izumi of Kyoto (JP)|Naoki Izumi of Kyoto (JP)]][[Category:Naoki Izumi of Kyoto (JP)]]

[[:Category:Hajime Okuda of Kyoto (JP)|Hajime Okuda of Kyoto (JP)]][[Category:Hajime Okuda of Kyoto (JP)]]

==SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18462728 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

==Simplified Explanation==

The semiconductor device described in the abstract includes various regions and layers such as n-type semiconductor layer, p-type drift region, n-type body region, p-type drain region, p-type source region, gate insulating film, gate electrode, and n-type region.

* n-type semiconductor layer
* p-type drift region
* n-type body region
* p-type drain region
* p-type source region
* gate insulating film
* gate electrode
* n-type region

**Potential Applications:**
This semiconductor device could be used in power electronics, integrated circuits, and other electronic devices that require efficient control of electrical currents.

**Problems Solved:**
This technology helps in improving the efficiency and performance of semiconductor devices by optimizing the flow of electrical currents and reducing power losses.

**Benefits:**
The benefits of this technology include enhanced power efficiency, improved device performance, and increased reliability in electronic systems.

**Potential Commercial Applications:**
*Optimizing Electrical Current Flow in Semiconductor Devices*

**Possible Prior Art:**
Prior art in semiconductor devices includes various structures and configurations aimed at improving performance and efficiency, such as different types of transistor designs and materials used in semiconductor manufacturing.

**Unanswered Questions:**

1. How does the size of the semiconductor device impact its performance and efficiency?
2. Are there any limitations to the applications of this technology in specific electronic devices?


==Original Abstract Submitted==

A semiconductor device includes: an n-type semiconductor layer; a p-type drift region formed in a surface layer of the n-type semiconductor layer; an n-type body region formed in the surface layer of the n-type semiconductor layer so as to be spaced apart from or adjacent to the p-type drift region; a p-type drain region formed in a surface layer of the p-type drift region; a p-type source region formed in a surface layer of the n-type body region; a gate insulating film formed over a surface of the n-type semiconductor layer so as to straddle the p-type drift region and the n-type body region; a gate electrode formed over the gate insulating film; and an n-type region formed in the surface layer of the p-type drift region and arranged between a side edge of the p-type drift region near the n-type body region and the p-type drain region.



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