View source for 18455953. APPARATUSES AND METHODS FOR PROVIDING COMMAND HAVING ON-THE-FLY (OTF) LATENCY TO MEMORY simplified abstract (Samsung Electronics Co., Ltd.)

=APPARATUSES AND METHODS FOR PROVIDING COMMAND HAVING ON-THE-FLY (OTF) LATENCY TO MEMORY=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Younghwa Kim of Suwon-si (KR)|Younghwa Kim of Suwon-si (KR)]][[Category:Younghwa Kim of Suwon-si (KR)]]

==APPARATUSES AND METHODS FOR PROVIDING COMMAND HAVING ON-THE-FLY (OTF) LATENCY TO MEMORY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18455953 titled 'APPARATUSES AND METHODS FOR PROVIDING COMMAND HAVING ON-THE-FLY (OTF) LATENCY TO MEMORY

==Simplified Explanation==

The abstract describes a memory device that supports on-the-fly (OTF) latency by receiving a command with a command latency value and controlling the operation of the memory device based on this latency value.

* Memory device with signal pins connected to signal lines
* Control logic circuit receives OTF command with command latency value
* Controls memory device operation based on OTF latency and time point of command application

== Potential Applications ==
* High-speed data processing systems
* Real-time computing applications
* Networking equipment

== Problems Solved ==
* Improving memory device performance
* Enhancing real-time data processing capabilities
* Reducing latency in command execution

== Benefits ==
* Faster data processing speeds
* Improved system responsiveness
* Enhanced overall performance of memory devices


==Original Abstract Submitted==

A memory device supporting OTF latency includes a plurality of signal pins connected to a plurality of signal lines; and a control logic circuit configured to receive an OTF command including a command latency (CDL) value indicating the OTF latency through command lines among the plurality of signal lines, and control an operation of the memory device to be performed based on the OTF latency and a time point at which the OTF command is applied.



[[Category:G11C7/22]]
[[Category:G11C7/10]]