View source for 18455631. MEMORY DEVICE AND MEMORY SYSTEM FOR PERFORMING TARGET REFRESH OPERATION simplified abstract (SK hynix Inc.)

=MEMORY DEVICE AND MEMORY SYSTEM FOR PERFORMING TARGET REFRESH OPERATION=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Hyun Seung Kim of Gyeonggi-do (KR)|Hyun Seung Kim of Gyeonggi-do (KR)]][[Category:Hyun Seung Kim of Gyeonggi-do (KR)]]

[[:Category:Sung Je Roh of Gyeonggi-do (KR)|Sung Je Roh of Gyeonggi-do (KR)]][[Category:Sung Je Roh of Gyeonggi-do (KR)]]

[[:Category:Kang Seol Lee of Gyeonggi-do (KR)|Kang Seol Lee of Gyeonggi-do (KR)]][[Category:Kang Seol Lee of Gyeonggi-do (KR)]]

==MEMORY DEVICE AND MEMORY SYSTEM FOR PERFORMING TARGET REFRESH OPERATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18455631 titled 'MEMORY DEVICE AND MEMORY SYSTEM FOR PERFORMING TARGET REFRESH OPERATION

The memory device described in the patent application includes circuits that control the activation and addressing of memory cells.

* The active control circuit generates signals for activating and precharging memory cells based on commands received.
* The address control circuit generates row addresses for memory cells based on the active address and an adjacent address.
* The row control circuit activates word lines corresponding to the row address to access the desired memory cells.

Potential Applications:
- This technology can be used in various electronic devices that require memory storage, such as smartphones, tablets, and computers.
- It can also be applied in data centers and servers for high-speed data processing and storage.

Problems Solved:
- Efficient and reliable access to memory cells.
- Improved performance and speed of memory operations.

Benefits:
- Faster data access and retrieval.
- Enhanced overall performance of electronic devices.
- Increased efficiency in data processing tasks.

Commercial Applications:
Title: Advanced Memory Technology for Enhanced Data Processing
This technology can revolutionize the memory storage industry by providing faster and more reliable memory access for a wide range of electronic devices. It can significantly impact the performance of smartphones, computers, data centers, and other devices that rely on memory storage for their operations.

Prior Art:
Readers interested in exploring prior art related to this technology can start by researching patents and publications in the field of memory devices, semiconductor technology, and integrated circuits.

Frequently Updated Research:
Researchers and developers in the field of memory technology are constantly working on improving memory access speeds, reducing power consumption, and enhancing overall memory performance. Stay updated on the latest advancements in memory technology to leverage the benefits of cutting-edge innovations.

Questions about Memory Device Technology:
1. How does this memory device technology compare to existing memory access methods?
This technology offers faster and more efficient memory access compared to traditional methods, leading to improved performance in electronic devices.

2. What are the potential challenges in implementing this memory device technology on a large scale?
Implementing this technology on a large scale may require significant investment in manufacturing processes and infrastructure to ensure seamless integration into various electronic devices.


==Original Abstract Submitted==

A memory device includes an active control circuit configured to generate an internal active signal and an internal precharge signal according to one of an active command and a precharge command, and generate a row active signal according to the active command, the internal active signal, the precharge command, and the internal precharge signal; an address control circuit configured to generate a row address corresponding to an active address and an adjacent address adjacent to the active address; and a row control circuit configured to activate at least one word line corresponding to the row address according to the row active signal.



[[Category:G11C11/406]]
[[Category:G11C11/408]]
[[Category:CPC_G11C11/40603]]