View source for 18451969. MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=MEMORY DEVICE=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Jungmin Bak of Suwon-si (KR)|Jungmin Bak of Suwon-si (KR)]][[Category:Jungmin Bak of Suwon-si (KR)]]

[[:Category:Sangkil Lee of Suwon-si (KR)|Sangkil Lee of Suwon-si (KR)]][[Category:Sangkil Lee of Suwon-si (KR)]]

==MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18451969 titled 'MEMORY DEVICE

The memory device described in the abstract includes a mode register that stores codes for indicating termination resistance and disabling defective resistors, along with an output driver that controls pull-up and pull-down resistors based on these codes.

* The mode register stores codes for termination resistance and disabling defective resistors.
* The output driver enables or disables pull-up and pull-down resistors based on the stored codes.
* A subset of pull-up and pull-down units are enabled based on the termination resistance code.
* The technology allows for efficient control of resistors in the memory device.

Potential Applications:
- Memory devices in electronic devices
- Integrated circuits requiring precise resistor control

Problems Solved:
- Ensuring termination resistance in memory devices
- Disabling defective resistors for optimal performance

Benefits:
- Improved functionality and reliability of memory devices
- Enhanced control over resistor configurations

Commercial Applications:
Title: Advanced Memory Device Technology for Enhanced Performance
This technology can be utilized in various electronic devices, such as smartphones, computers, and servers, to improve memory performance and reliability. The market implications include increased demand for high-quality memory components in the electronics industry.

Prior Art:
Researchers can explore prior patents related to memory device resistor control and termination resistance to understand the existing technology landscape.

Frequently Updated Research:
Researchers in the field of semiconductor devices and memory technology may conduct studies on optimizing resistor configurations in memory devices for improved performance and efficiency.

Questions about Memory Device Technology:
1. How does the mode register in the memory device impact resistor control?
The mode register stores codes that determine the behavior of pull-up and pull-down resistors in the memory device, enabling precise control over resistor configurations.

2. What are the potential implications of disabling defective resistors in memory devices?
Disabling defective resistors ensures optimal performance and reliability of the memory device, reducing the risk of malfunctions or errors in data storage and retrieval.


==Original Abstract Submitted==

A memory device includes a mode register configured to store a first code for indicating termination resistance of the memory device and a second code for disabling a defective resistor, and an output driver including a plurality of pull-up units including a plurality of pull-up resistors and a plurality of pull-down units including a plurality of pull-down resistors. The output driver is configured to disable or enable respective pull-up resistors and pull-down resistors based on the second code, enable a subset of pull-up units from among the plurality of pull-up units including the respective pull-up resistors based on the first code, and enable a subset of pull-down unit from among the plurality of pull-down units including the respective pull-down resistors based on the first code.



[[Category:G11C29/10]]
[[Category:G11C7/10]]
[[Category:CPC_G11C29/10]]