View source for 18451077. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND MEMORY simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)

=SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND MEMORY=


==Organization Name==

[[:Category:CHANGXIN MEMORY TECHNOLOGIES, INC.|CHANGXIN MEMORY TECHNOLOGIES, INC.]]


[[Category:CHANGXIN MEMORY TECHNOLOGIES, INC.]]

==Inventor(s)==

[[:Category:Shuhao Zhang of Hefei City (CN)|Shuhao Zhang of Hefei City (CN)]][[Category:Shuhao Zhang of Hefei City (CN)]]

[[:Category:Ning Li of Hefei City (CN)|Ning Li of Hefei City (CN)]][[Category:Ning Li of Hefei City (CN)]]

==SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND MEMORY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18451077 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND MEMORY

==Simplified Explanation==

The semiconductor structure described in the abstract includes multiple active areas arranged in an array, a bit line select structure, and multiple contact structures. The active areas are spaced apart by an isolation structure, and the bit line select structure includes four gates located on four adjacent active areas. The contact structures are located close to the connecting line and connected to the active areas.

* The semiconductor structure includes multiple active areas arranged in an array.
* The bit line select structure comprises four gates located on adjacent active areas.
* The contact structures are located close to the connecting line and connected to the active areas.

== Potential Applications ==
This semiconductor structure could be used in memory devices, logic circuits, and other semiconductor applications where precise control and connectivity are required.

== Problems Solved ==
This technology solves the problem of efficiently connecting multiple active areas in a semiconductor structure while maintaining isolation between them.

== Benefits ==
The benefits of this technology include improved performance, increased density of active areas, and enhanced connectivity in semiconductor devices.

== Potential Commercial Applications ==
The potential commercial applications of this technology include memory chips, processors, and other semiconductor products that require precise control and connectivity.

== Possible Prior Art ==
One possible prior art for this technology could be the use of similar structures in previous semiconductor devices, although the specific arrangement and configuration described in this patent application may be novel.

== Unanswered Questions ==
=== How does this semiconductor structure compare to existing technologies in terms of performance and efficiency? ===
This article does not provide a direct comparison with existing technologies to evaluate its performance and efficiency.

=== What are the manufacturing considerations for implementing this semiconductor structure on a large scale? ===
The article does not discuss the specific manufacturing processes or challenges involved in producing this semiconductor structure on a commercial scale.


==Original Abstract Submitted==

A semiconductor structure includes: multiple active areas arranged in an array along intersecting first and second directions and spaced apart by an isolation structure; a bit line select structure comprising a first gate, a second gate, a third gate and a fourth gate located on four mutually adjacent active areas, and at least one connecting line located on the isolation structure; and multiple contact structures, each of the multiple contact structures being located on one side, close to the connecting line, of both sides of a respective gate and connected with a respective one of the multiple active areas, and an orthographic projection of the contact structure on a plane where the active area is located being at a position, close to the connecting line, in the active area.



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