View source for 18449848. SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)

=SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE=


==Organization Name==

[[:Category:KABUSHIKI KAISHA TOSHIBA|KABUSHIKI KAISHA TOSHIBA]]


[[Category:KABUSHIKI KAISHA TOSHIBA]]

==Inventor(s)==

[[:Category:Hirofumi Nagano of Fujisawa, Kanagawa (JP)|Hirofumi Nagano of Fujisawa, Kanagawa (JP)]][[Category:Hirofumi Nagano of Fujisawa, Kanagawa (JP)]]

[[:Category:Kumiko Sato of Kanazawa, Ishikawa (JP)|Kumiko Sato of Kanazawa, Ishikawa (JP)]][[Category:Kumiko Sato of Kanazawa, Ishikawa (JP)]]

==SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18449848 titled 'SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

The semiconductor device described in the abstract includes different regions and a gate region on the surface layer of the semiconductor substrate.

* The first region is of a first conductive type and is formed on one main surface side of the semiconductor substrate.
* The second region is of a second conductive type and is formed in a different region of the surface layer from the first region.
* The third region is located between the first and second regions on the surface layer, with a predetermined impurity concentration distribution.
* The gate region is formed at one end of the third region through a gate oxide layer.
* The third region includes a first change region of the impurity concentration distribution corresponding to the position of the gate region.

Potential Applications:
- This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications.
- It can improve the performance and efficiency of integrated circuits and other electronic components.

Problems Solved:
- This technology addresses the need for precise control of impurity concentration in semiconductor devices.
- It helps in enhancing the functionality and reliability of electronic devices.

Benefits:
- Improved performance and efficiency of semiconductor devices.
- Enhanced control over impurity concentration for better device characteristics.

Commercial Applications:
Title: Advanced Semiconductor Device Technology for Enhanced Electronic Performance
This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and automotive electronics. It can also benefit the semiconductor industry by enabling the development of more advanced and efficient devices.

Questions about Semiconductor Device Technology:
1. How does the impurity concentration distribution impact the performance of semiconductor devices?
2. What are the potential challenges in implementing this technology in mass production?


==Original Abstract Submitted==

According to an embodiment of the present invention, a semiconductor device includes a first region, a second region, a third region, and a gate region. The first region is of first conductive type and formed on a surface layer on one main surface side of the semiconductor substrate. The second region is of second conductive type and formed in a different region of the surface layer from the first region. The third region is formed between the first region and the second region on the surface layer, and has a predetermined impurity concentration distribution. The gate region is formed at one end of the third region through a gate oxide layer. The third region includes a first change region of the impurity concentration distribution corresponding to a position of the gate region.



[[Category:H01L29/10]]
[[Category:H01L29/40]]
[[Category:H01L29/78]]
[[Category:CPC_H01L29/1045]]