View source for 18444959. Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Yu-Jen Chang of Hsinchu (TW)|Yu-Jen Chang of Hsinchu (TW)]][[Category:Yu-Jen Chang of Hsinchu (TW)]]

[[:Category:Hua Feng Chen of Hsinchu City (TW)|Hua Feng Chen of Hsinchu City (TW)]][[Category:Hua Feng Chen of Hsinchu City (TW)]]

[[:Category:Kuo-Hua Pan of Hsinchu City (TW)|Kuo-Hua Pan of Hsinchu City (TW)]][[Category:Kuo-Hua Pan of Hsinchu City (TW)]]

[[:Category:Min-Yann Hsieh of Kaohsiung City (TW)|Min-Yann Hsieh of Kaohsiung City (TW)]][[Category:Min-Yann Hsieh of Kaohsiung City (TW)]]

==Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18444959 titled 'Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof

'''Simplified Explanation:'''
This patent application discloses interconnect structures and techniques for forming them. An exemplary interconnect structure includes a conductive feature with cobalt and a via over it. The via consists of multiple layers including titanium, titanium nitride, and tungsten or cobalt.

* Key Features and Innovation:
- Interconnect structure with cobalt-containing conductive feature
- Via structure with multiple layers including titanium, titanium nitride, and tungsten or cobalt
- Capping layer with cobalt and silicon

* Potential Applications:
- Semiconductor manufacturing
- Integrated circuits
- Electronics industry

* Problems Solved:
- Improved conductivity and reliability in interconnect structures
- Enhanced performance of electronic devices

* Benefits:
- Increased efficiency in signal transmission
- Longer lifespan of electronic components
- Reduced risk of failure in interconnect structures

* Commercial Applications:
Title: Advanced Interconnect Structures for Semiconductor Devices
This technology can be utilized in the semiconductor industry for manufacturing high-performance integrated circuits, leading to improved electronic devices with enhanced reliability and functionality.

* Prior Art:
Readers can explore prior patents related to interconnect structures, conductive features, and via formation techniques in the semiconductor industry.

* Frequently Updated Research:
Researchers are continually developing new materials and techniques to enhance interconnect structures in semiconductor devices for better performance and reliability.

'''Questions about Interconnect Structures:'''
1. How do interconnect structures impact the overall performance of electronic devices?
- Interconnect structures play a crucial role in ensuring efficient signal transmission and connectivity within electronic devices, ultimately affecting their speed and reliability.

2. What are the key materials used in forming advanced interconnect structures?
- Advanced interconnect structures often incorporate materials such as cobalt, titanium, titanium nitride, tungsten, and silicon to achieve optimal conductivity and reliability.


==Original Abstract Submitted==

Interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. An exemplary interconnect structure includes a conductive feature that includes cobalt and a via disposed over the conductive feature. The via includes a first via barrier layer disposed over the conductive feature, a second via barrier layer disposed over the first via barrier layer, and a via bulk layer disposed over the second via barrier layer. The first via barrier layer includes titanium, and the second via barrier layer includes titanium and nitrogen. The via bulk layer can include tungsten and/or cobalt. A capping layer may be disposed over the conductive feature, where the via extends through the capping layer to contact the conductive feature. In some implementations, the capping layer includes cobalt and silicon.



[[Category:H01L21/768]]
[[Category:H01L23/485]]
[[Category:H01L23/522]]
[[Category:H01L23/532]]
[[Category:CPC_H01L21/76846]]