View source for 18444778. SEMICONDUCTOR STRUCTURE simplified abstract (E Ink Holdings Inc.)

=SEMICONDUCTOR STRUCTURE=


==Organization Name==

[[:Category:E Ink Holdings Inc.|E Ink Holdings Inc.]]


[[Category:E Ink Holdings Inc.]]

==Inventor(s)==

[[:Category:Ming-Kai Chuang of Hsinchu (TW)|Ming-Kai Chuang of Hsinchu (TW)]][[Category:Ming-Kai Chuang of Hsinchu (TW)]]

[[:Category:Huai-Cheng Lin of Hsinchu (TW)|Huai-Cheng Lin of Hsinchu (TW)]][[Category:Huai-Cheng Lin of Hsinchu (TW)]]

[[:Category:Ming-Sheng Chiang of Hsinchu (TW)|Ming-Sheng Chiang of Hsinchu (TW)]][[Category:Ming-Sheng Chiang of Hsinchu (TW)]]

[[:Category:Lih-Hsiung Chan of Hsinchu (TW)|Lih-Hsiung Chan of Hsinchu (TW)]][[Category:Lih-Hsiung Chan of Hsinchu (TW)]]

==SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18444778 titled 'SEMICONDUCTOR STRUCTURE

'''Simplified Explanation:'''
The semiconductor structure in the patent application includes a gate, an active layer, a gate insulator layer, a source, and a drain. The active layer consists of a source region, a drain region, and a channel region. The structure meets specific conditions related to the materials and thicknesses used in different regions.

'''Key Features and Innovation:'''
* The active layer may contain a-Si material, with varying thicknesses in different regions.
* The gate insulator layer comprises multiple layers with different materials to enhance performance.

'''Potential Applications:'''
This technology could be applied in the development of advanced semiconductor devices for various electronic applications.

'''Problems Solved:'''
The patent addresses the need for improved semiconductor structures with optimized materials and thicknesses for enhanced performance.

'''Benefits:'''
* Enhanced efficiency and performance in semiconductor devices.
* Potential for increased functionality and reliability in electronic applications.

'''Commercial Applications:'''
The technology could be utilized in the production of high-performance electronic devices, potentially impacting industries such as consumer electronics and telecommunications.

'''Prior Art:'''
Readers can explore prior research on semiconductor structures, gate insulator layers, and materials used in semiconductor devices to understand the background of this innovation.

'''Frequently Updated Research:'''
Stay updated on advancements in semiconductor technology, materials science, and device fabrication techniques to further enhance the performance of semiconductor structures.

'''Questions about Semiconductor Structures:'''
1. What are the key considerations in designing semiconductor structures for optimal performance?
2. How do different materials in the gate insulator layer impact the overall functionality of semiconductor devices?


==Original Abstract Submitted==

A semiconductor structure includes a gate, an active layer, a gate insulator layer, a source, and a drain. The active layer has a source region, a drain region, and a channel region. The semiconductor structure satisfies at least one of the following conditions: (1) a material of the active layer includes a-Si, and a first thickness and a second thickness of the active layer respectively in the source region and the drain region are respectively greater than a third thickness of the active layer in the channel region; (2) the gate insulator layer includes a first gate insulator layer, a third gate insulator layer, and a second gate insulator layer located between the first and third gate insulator layers. A material of the first gate insulator layer is identical to a material of the third gate insulator layer but different from a material of the second gate insulator layer.



[[Category:H01L29/51]]
[[Category:H01L29/786]]
[[Category:CPC_H01L29/513]]