View source for 18444419. PHOTOELECTRIC CONVERSION DEVICE simplified abstract (CANON KABUSHIKI KAISHA)

=PHOTOELECTRIC CONVERSION DEVICE=


==Organization Name==

[[:Category:CANON KABUSHIKI KAISHA|CANON KABUSHIKI KAISHA]]


[[Category:CANON KABUSHIKI KAISHA]]

==Inventor(s)==

[[:Category:MAHITO Shinohara of Tokyo (JP)|MAHITO Shinohara of Tokyo (JP)]][[Category:MAHITO Shinohara of Tokyo (JP)]]

==PHOTOELECTRIC CONVERSION DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18444419 titled 'PHOTOELECTRIC CONVERSION DEVICE

'''Simplified Explanation''': 

The patent application describes a photoelectric conversion device that can switch between two voltages to efficiently convert light into electrical signals.

* The device includes a photoelectric conversion unit with different semiconductor regions forming a p-n junction.
* A control circuit switches the reverse bias voltage between two voltages to accumulate and transfer signal charge effectively.
* Avalanche multiplication occurs at the p-n junction to enhance the conversion efficiency.
* The control circuit changes the reverse bias voltage to a rectangular shape for optimal performance.

'''Key Features and Innovation''':

* Efficient switching between two voltages for optimal signal charge accumulation and transfer.
* Avalanche multiplication at the p-n junction for enhanced conversion efficiency.
* Control circuit with a unique rectangular shape reverse bias voltage for improved performance.

'''Potential Applications''':

The technology can be used in:
* Solar panels
* Image sensors
* Photodetectors

'''Problems Solved''':

* Efficient conversion of light into electrical signals
* Enhanced performance in low-light conditions

'''Benefits''':

* Improved energy conversion efficiency
* Better performance in challenging lighting conditions

'''Commercial Applications''''':

Potential commercial applications include:
* Solar energy systems
* Surveillance cameras
* Medical imaging devices

'''Prior Art''''':

Readers can explore prior art related to this technology in the field of photoelectric conversion devices and semiconductor physics.

'''Frequently Updated Research''''':

Stay updated on the latest research in photoelectric conversion devices and semiconductor technology for advancements in efficiency and performance.

'''Questions about Photoelectric Conversion Devices''':

1. How does the avalanche multiplication at the p-n junction enhance the conversion efficiency?
2. What are the potential commercial applications of this technology beyond solar panels and image sensors?


==Original Abstract Submitted==

A photoelectric conversion device includes a photoelectric conversion unit including a first semiconductor region, a second semiconductor region, and a third semiconductor region forming a p-n junction with the second semiconductor region, and a control circuit for switching a voltage of a reverse bias voltage applied between the first and the second semiconductor regions between first and second voltages. The photoelectric conversion device performs a period in which the reverse bias voltage is set to the first voltage to accumulate signal charge in the third semiconductor region, and a period in which the reverse bias voltage is set to the second voltage to enable transfer of signal charge to the first semiconductor region, and avalanche multiplication at the p-n junction between the first and second semiconductor regions. The control circuit switches between the first voltage and the second voltage by changing the reverse bias voltage to a rectangular shape.



[[Category:H04N25/63]]
[[Category:G01S7/4863]]
[[Category:G01S17/894]]
[[Category:H01L23/00]]
[[Category:H01L27/146]]
[[Category:H04N25/77]]
[[Category:H04N25/79]]
[[Category:CPC_H04N25/63]]