View source for 18437017. SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS simplified abstract (SONY GROUP CORPORATION)

=SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS=


==Organization Name==

[[:Category:SONY GROUP CORPORATION|SONY GROUP CORPORATION]]


[[Category:SONY GROUP CORPORATION]]

==Inventor(s)==

[[:Category:Masaki Okamoto of Kumamoto (JP)|Masaki Okamoto of Kumamoto (JP)]][[Category:Masaki Okamoto of Kumamoto (JP)]]

==SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18437017 titled 'SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

==Simplified Explanation==

The abstract describes a method of manufacturing a semiconductor device involving bonding two semiconductor wafers, forming insulating layers, creating connection holes, and forming vias to connect wiring layers.

* Bonding of two semiconductor wafers with insulating layers
* Formation of connection holes with different diameters
* Creation of vias to connect wiring layers

== Potential Applications ==
This technology can be applied in the manufacturing of various semiconductor devices such as integrated circuits, sensors, and memory chips.

== Problems Solved ==
This method solves the problem of efficiently connecting different wiring layers in a semiconductor device while maintaining proper insulation and electrical conductivity.

== Benefits ==
The benefits of this technology include improved performance, increased efficiency in manufacturing processes, and enhanced reliability of semiconductor devices.

== Potential Commercial Applications ==
* "Semiconductor Device Manufacturing Method for Enhanced Wiring Connections"

== Possible Prior Art ==
There may be prior art related to methods of bonding semiconductor wafers, forming connection holes, and creating vias in semiconductor devices.

== Unanswered Questions ==

=== How does this method compare to traditional semiconductor manufacturing processes? ===
This article does not provide a direct comparison between this method and traditional semiconductor manufacturing processes. 

=== What are the specific semiconductor devices that can benefit the most from this technology? ===
The article does not specify the specific semiconductor devices that can benefit the most from this technology.


==Original Abstract Submitted==

A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.



[[Category:H01L21/768]]
[[Category:H01L23/00]]
[[Category:H01L23/48]]
[[Category:H01L23/522]]
[[Category:H01L27/146]]
[[Category:H04N25/75]]