View source for 18435628. UNIFORM ELECTROCHEMICAL PLATING OF METAL ONTO ARRAYS OF PILLARS HAVING DIFFERENT LATERAL DENSITIES AND RELATED TECHNOLOGY simplified abstract (Lodestar Licensing Group LLC)

=UNIFORM ELECTROCHEMICAL PLATING OF METAL ONTO ARRAYS OF PILLARS HAVING DIFFERENT LATERAL DENSITIES AND RELATED TECHNOLOGY=


==Organization Name==

[[:Category:Lodestar Licensing Group LLC|Lodestar Licensing Group LLC]]


[[Category:Lodestar Licensing Group LLC]]

==Inventor(s)==

[[:Category:Jonathan S. Hacker of Meridian ID (US)|Jonathan S. Hacker of Meridian ID (US)]][[Category:Jonathan S. Hacker of Meridian ID (US)]]

==UNIFORM ELECTROCHEMICAL PLATING OF METAL ONTO ARRAYS OF PILLARS HAVING DIFFERENT LATERAL DENSITIES AND RELATED TECHNOLOGY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18435628 titled 'UNIFORM ELECTROCHEMICAL PLATING OF METAL ONTO ARRAYS OF PILLARS HAVING DIFFERENT LATERAL DENSITIES AND RELATED TECHNOLOGY

==Simplified Explanation==

The semiconductor die assembly described in the abstract includes two semiconductor dies spaced apart, with an array of pillars extending from one die towards the other. The pillars have different densities and widths to offset differences in metal deposition rates during plating.

* The semiconductor die assembly includes first and second semiconductor dies with an array of pillars extending between them.
* The pillars have different lateral densities and widths to offset differences in metal deposition rates during plating.

== Potential Applications ==
This technology could be applied in the manufacturing of semiconductor devices, such as microprocessors, memory chips, and sensors.

== Problems Solved ==
This technology addresses the challenge of achieving uniform metal deposition rates during electrochemical plating processes in semiconductor manufacturing.

== Benefits ==
The use of pillars with different densities and widths helps to ensure consistent metal deposition rates, leading to improved quality and reliability of semiconductor devices.

== Potential Commercial Applications ==
This technology could be valuable in the semiconductor industry for producing high-performance and reliable electronic components.

== Possible Prior Art ==
One possible prior art could be the use of sacrificial layers or templates to control metal deposition rates in semiconductor manufacturing processes.

=== What are the specific materials used in the semiconductor die assembly described in the patent application? ===

The specific materials used in the semiconductor die assembly are not mentioned in the abstract. However, typical materials used in semiconductor manufacturing include silicon, metals, and insulating materials.

=== How does the different lateral densities and widths of the pillars affect the overall performance of the semiconductor die assembly? ===

The different lateral densities and widths of the pillars help to offset variations in metal deposition rates during plating, ensuring uniformity in the final semiconductor device. This leads to improved functionality and reliability of the semiconductor die assembly.


==Original Abstract Submitted==

A semiconductor die assembly in accordance with an embodiment of the present technology includes first and second semiconductor dies spaced apart from one another. The first semiconductor die has a major surface with non-overlapping first and second regions. The semiconductor die assembly further includes an array of first pillars extending heightwise from the first region of the major surface of the first semiconductor die toward the second semiconductor die. Similarly, the semiconductor die assembly includes an array of second pillars extending heightwise from the second region of the major surface of the first semiconductor die toward the second semiconductor die. The first and second pillars have different lateral densities and different average widths. The latter difference at least partially offsets an effect of the former difference on relative metal deposition rates of an electrochemical plating process used to form the first and second pillars.



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