View source for 18435294. MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF simplified abstract (Yangtze Memory Technologies Co., Ltd.)

=MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF=


==Organization Name==

[[:Category:Yangtze Memory Technologies Co., Ltd.|Yangtze Memory Technologies Co., Ltd.]]


[[Category:Yangtze Memory Technologies Co., Ltd.]]

==Inventor(s)==

[[:Category:Jun Liu of Wuhan (CN)|Jun Liu of Wuhan (CN)]][[Category:Jun Liu of Wuhan (CN)]]

[[:Category:Zongliang Huo of Wuhan (CN)|Zongliang Huo of Wuhan (CN)]][[Category:Zongliang Huo of Wuhan (CN)]]

[[:Category:Li Hong Xiao of Wuhan (CN)|Li Hong Xiao of Wuhan (CN)]][[Category:Li Hong Xiao of Wuhan (CN)]]

[[:Category:Zhenyu Lu of Wuhan (CN)|Zhenyu Lu of Wuhan (CN)]][[Category:Zhenyu Lu of Wuhan (CN)]]

[[:Category:Qian Tao of Wuhan (CN)|Qian Tao of Wuhan (CN)]][[Category:Qian Tao of Wuhan (CN)]]

[[:Category:Yushi Hu of Wuhan (CN)|Yushi Hu of Wuhan (CN)]][[Category:Yushi Hu of Wuhan (CN)]]

[[:Category:Sizhe Li of Wuhan (CN)|Sizhe Li of Wuhan (CN)]][[Category:Sizhe Li of Wuhan (CN)]]

[[:Category:Zhao Hui Tang of Wuhan (CN)|Zhao Hui Tang of Wuhan (CN)]][[Category:Zhao Hui Tang of Wuhan (CN)]]

[[:Category:Yu Ting Zhou of Wuha (CN)|Yu Ting Zhou of Wuha (CN)]][[Category:Yu Ting Zhou of Wuha (CN)]]

[[:Category:Zhaosong Li of Wuhan (CN)|Zhaosong Li of Wuhan (CN)]][[Category:Zhaosong Li of Wuhan (CN)]]

==MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18435294 titled 'MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF

==Simplified Explanation==

The memory device described in the patent application includes a unique structure with alternating conductor layers and insulating layers in two stacked structures, connected by channel structures and a pillar structure with a metal layer.

* The memory device consists of a first stack structure and a second stack structure, each containing conductor layers and insulating layers stacked alternately.
* A first channel structure extends through the first stack structure, while a second channel structure extends through the second stack structure and is connected to the first channel structure.
* The end of the first channel structure closer to the second channel structure has a greater width than the end of the second channel structure closer to the first channel structure.
* A pillar structure extends through both stack structures, including a metal layer.

== Potential Applications ==
This technology could be applied in:
* High-speed memory devices
* Data storage systems
* Semiconductor industry

== Problems Solved ==
This innovation addresses:
* Improving memory device performance
* Enhancing data storage capacity
* Increasing efficiency in semiconductor manufacturing

== Benefits ==
The benefits of this technology include:
* Faster data processing speeds
* Higher memory density
* Enhanced reliability and durability

== Potential Commercial Applications ==
Potential commercial applications for this technology may include:
* Memory chip manufacturing companies
* Data center technology providers
* Electronics manufacturers

== Possible Prior Art ==
One possible prior art for this technology could be:
* Stacked memory structures with channel and pillar connections

=== Unanswered Questions ===

=== How does this technology compare to existing memory device structures in terms of performance and efficiency? ===
This article does not provide a direct comparison with existing memory device structures, leaving the reader to infer the potential advantages of the described innovation.

=== What specific materials are used in the conductor layers and insulating layers of the memory device? ===
The patent abstract does not specify the exact materials used in the conductor and insulating layers, which could be crucial for understanding the device's properties and applications.


==Original Abstract Submitted==

In an example, a memory device includes a first stack structure and a second stack structure over the first stack structure. Each of the first stack structure and the second stack structure includes alternately stacked conductor layers and first insulating layers. The memory device also includes a first channel structure extending through the first stack structure, and a second channel structure extending through the second stack structure and connected with the first channel structure. A width of an end of the first channel structure closer to the second channel structure is greater than that of the second channel structure closer to the first channel structure. The memory device further includes a pillar structure extending through the first stack structure and the second stack structure. The pillar structure includes a metal layer.



[[Category:H10B43/27]]
[[Category:H01L21/033]]
[[Category:H01L21/308]]
[[Category:H01L23/532]]
[[Category:H10B43/35]]
[[Category:H10B43/40]]