View source for 18433867. SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Chang-Yun Chang of Taipei City (TW)|Chang-Yun Chang of Taipei City (TW)]][[Category:Chang-Yun Chang of Taipei City (TW)]]

[[:Category:Bone-Fong Wu of Hsinchu City (TW)|Bone-Fong Wu of Hsinchu City (TW)]][[Category:Bone-Fong Wu of Hsinchu City (TW)]]

[[:Category:Ming-Chang Wen of Kaohsiung City (TW)|Ming-Chang Wen of Kaohsiung City (TW)]][[Category:Ming-Chang Wen of Kaohsiung City (TW)]]

[[:Category:Ya-Hsiu Lin of Taoyuan City (TW)|Ya-Hsiu Lin of Taoyuan City (TW)]][[Category:Ya-Hsiu Lin of Taoyuan City (TW)]]

==SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18433867 titled 'SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC

The abstract describes a device with a semiconductor fin, gate structure, gate spacers, and a dielectric feature. The semiconductor fin is located over a substrate, while the gate structure is positioned over the semiconductor fin and consists of a gate dielectric layer and a gate metal. The gate spacers are on either side of the gate structure, and the dielectric feature is over the substrate, in contact with the gate metal, gate dielectric layer, and gate spacers.

* The device includes a semiconductor fin, gate structure, gate spacers, and a dielectric feature.
* The semiconductor fin is positioned over a substrate.
* The gate structure, located over the semiconductor fin, comprises a gate dielectric layer and a gate metal.
* Gate spacers are present on opposite sides of the gate structure.
* The dielectric feature is over the substrate and in contact with the gate metal, gate dielectric layer, and gate spacers.

Potential Applications:
- Advanced semiconductor devices
- Nanotechnology
- Integrated circuits

Problems Solved:
- Enhanced performance of semiconductor devices
- Improved efficiency in electronic components

Benefits:
- Increased speed and functionality of electronic devices
- Higher integration density
- Improved reliability and durability

Commercial Applications:
Title: Advanced Semiconductor Devices for Enhanced Performance
This technology can be utilized in the development of cutting-edge electronic devices, leading to improved performance and efficiency in various industries such as telecommunications, computing, and consumer electronics.

Questions about the technology:
1. How does the dielectric feature enhance the performance of the device?
2. What are the potential implications of using gate spacers in the gate structure?


==Original Abstract Submitted==

A device includes a semiconductor fin, a gate structure, gate spacers, and a dielectric feature. The semiconductor fin is over a substrate. The gate structure is over the semiconductor fin and includes a gate dielectric layer over the semiconductor fin and a gate metal covering the gate dielectric layer. The gate spacers are on opposite sides of the gate structure. The dielectric feature is over the substrate. The dielectric feature is in contact with the gate metal, the gate dielectric layer, and the gate spacers, and an interface between the gate metal and the dielectric feature is substantially aligned with an interface between the dielectric feature and one of the gate spacers.



[[Category:H01L21/8234]]
[[Category:H01L21/02]]
[[Category:H01L21/027]]
[[Category:H01L21/265]]
[[Category:H01L21/3105]]
[[Category:H01L21/311]]
[[Category:H01L21/324]]
[[Category:H01L21/762]]
[[Category:H01L27/088]]
[[Category:H01L29/06]]
[[Category:H01L29/08]]
[[Category:H01L29/66]]
[[Category:CPC_H01L21/823431]]