View source for 18432546. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Chih-Piao Chuu of Hsinchu City (TW)|Chih-Piao Chuu of Hsinchu City (TW)]][[Category:Chih-Piao Chuu of Hsinchu City (TW)]]

[[:Category:Ming-Yang Li of Hsinchu City (TW)|Ming-Yang Li of Hsinchu City (TW)]][[Category:Ming-Yang Li of Hsinchu City (TW)]]

[[:Category:Lain-Jong Li of Hsinchu (TW)|Lain-Jong Li of Hsinchu (TW)]][[Category:Lain-Jong Li of Hsinchu (TW)]]

==SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18432546 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

==Simplified Explanation==

The abstract describes a method of fabricating a semiconductor device by applying a plasma to a metal dichalcogenide film, followed by the formation of a metal layer over the film.

* Metal dichalcogenide film: Includes a first metal and a chalcogen (S, Se, Te, or combinations).
* Plasma application: Used on a portion of the metal dichalcogenide film.
* Metal layer formation: Includes a second metal, formed over the film after plasma application.

== Potential Applications ==
This technology could be applied in the manufacturing of advanced semiconductor devices, such as transistors, sensors, and optoelectronic devices.

== Problems Solved ==
This method provides a way to improve the performance and efficiency of semiconductor devices by enhancing the properties of the metal dichalcogenide film through plasma treatment and the addition of a metal layer.

== Benefits ==
- Enhanced semiconductor device performance
- Improved efficiency and reliability
- Potential for miniaturization and increased functionality

== Potential Commercial Applications ==
"Enhancing Semiconductor Devices with Plasma Treatment and Metal Layer Addition"

== Possible Prior Art ==
There may be prior art related to the use of plasma treatment in semiconductor device fabrication processes, as well as the deposition of metal layers on metal dichalcogenide films. Research in the field of semiconductor materials and device fabrication may reveal relevant prior art.

=== Unanswered Questions ===

=== How does the plasma treatment affect the properties of the metal dichalcogenide film? ===
The article does not provide specific details on how the plasma treatment impacts the characteristics of the metal dichalcogenide film. Further research or experimentation may be needed to understand the mechanisms involved.

=== What are the specific advantages of adding a metal layer over the metal dichalcogenide film? ===
The benefits of incorporating a metal layer over the metal dichalcogenide film are mentioned in general terms, but a more detailed analysis of the advantages and potential drawbacks of this step would provide a clearer understanding of its impact on semiconductor device performance.


==Original Abstract Submitted==

A method of fabricating a semiconductor device includes applying a plasma to a portion of a metal dichalcogenide film. The metal dichalcogenide film includes a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof. A metal layer including a second metal is formed over the portion of the metal dichalcogenide film after applying the plasma.



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