View source for 18431628. TRANSISTOR UNIT INCLUDING SHARED GATE STRUCTURE, AND SUB-WORD LINE DRIVER AND SEMICONDUCTOR DEVICE BASED ON THE SAME TRANSISTOR UNIT simplified abstract (Samsung Electronics Co., Ltd.)

=TRANSISTOR UNIT INCLUDING SHARED GATE STRUCTURE, AND SUB-WORD LINE DRIVER AND SEMICONDUCTOR DEVICE BASED ON THE SAME TRANSISTOR UNIT=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Byunghoon Cho of Yongin-si (KR)|Byunghoon Cho of Yongin-si (KR)]][[Category:Byunghoon Cho of Yongin-si (KR)]]

[[:Category:Inseok Baek of Suwon-si (KR)|Inseok Baek of Suwon-si (KR)]][[Category:Inseok Baek of Suwon-si (KR)]]

[[:Category:Hyeonok Jung of Daejeon (KR)|Hyeonok Jung of Daejeon (KR)]][[Category:Hyeonok Jung of Daejeon (KR)]]

[[:Category:Beomyong Hwang of Seoul (KR)|Beomyong Hwang of Seoul (KR)]][[Category:Beomyong Hwang of Seoul (KR)]]

==TRANSISTOR UNIT INCLUDING SHARED GATE STRUCTURE, AND SUB-WORD LINE DRIVER AND SEMICONDUCTOR DEVICE BASED ON THE SAME TRANSISTOR UNIT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18431628 titled 'TRANSISTOR UNIT INCLUDING SHARED GATE STRUCTURE, AND SUB-WORD LINE DRIVER AND SEMICONDUCTOR DEVICE BASED ON THE SAME TRANSISTOR UNIT

==Simplified Explanation==

The abstract describes a transistor with a shared gate structure, where the active area includes a body and a protrusion, and the gate overlaps a channel area of the active area with an inverted pi (II) structure.

* The active area of the transistor includes a body and a protrusion extending in different directions on a substrate.
* The gate is arranged above the active area and has an inverted pi (II) structure that surrounds but does not cover a portion of the active area.
* The active area is divided into two sections by a separation area, with the gate overlapping a channel area of the active area.
* The transistor includes two transistors sharing the gate, with the body and protrusion corresponding to drain and source areas.

== Potential Applications ==
This technology could be applied in:
* Integrated circuits
* Microprocessors
* Memory devices

== Problems Solved ==
* Improved transistor performance
* Enhanced circuit efficiency
* Increased device reliability

== Benefits ==
* Higher transistor density
* Lower power consumption
* Faster operation speeds

== Potential Commercial Applications ==
Optimizing Transistor Design for Improved Performance

== Possible Prior Art ==
No prior art is known at this time.

== Unanswered Questions ==

=== How does this transistor design compare to traditional transistor structures in terms of performance and efficiency? ===
The article does not provide a direct comparison between this shared gate structure and traditional transistor designs. Further research or testing may be needed to determine the advantages and disadvantages of this innovation.

=== What impact could this technology have on the semiconductor industry in terms of manufacturing processes and costs? ===
The article does not address the potential impact of this technology on manufacturing processes or costs within the semiconductor industry. Additional studies or analyses may be required to evaluate the economic implications of implementing this innovation.


==Original Abstract Submitted==

A transistor with a shared gate structure includes an active area and a gate. The active area has a body extending in a first direction on a substrate, and a protrusion extending in a second direction perpendicular to the first direction from a central portion of the body in the first direction. The gate is arranged above the active area to overlap a channel area of the active area, and has an inverted pi (II) structure that, from a plan view, surrounds on three sides but does not cover a portion of the active area that includes two corner portions of the active area. The active area is divided into a first active area and a second active area by a separation area extending in the second direction and separating the body and a portion of the protrusion. The protrusion is divided into a first portion separated into two sub-portions by the separation area and a second portion, wherein the first portion is between the body and the second portion in the second direction. Opposite ends of the body in the first direction corresponding to two drain areas, the second portion of the protrusion corresponding to a common source area, and the gate constitute two transistors, wherein the two transistors share the gate.



[[Category:H01L29/423]]
[[Category:H01L29/10]]