View source for 18417093. SEMICONDUCTOR MEMORY DEVICE simplified abstract (DENSO CORPORATION)

=SEMICONDUCTOR MEMORY DEVICE=


==Organization Name==

[[:Category:DENSO CORPORATION|DENSO CORPORATION]]


[[Category:DENSO CORPORATION]]

==Inventor(s)==

[[:Category:TETSURO Takizawa of Nisshin-shi (JP)|TETSURO Takizawa of Nisshin-shi (JP)]][[Category:TETSURO Takizawa of Nisshin-shi (JP)]]

==SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18417093 titled 'SEMICONDUCTOR MEMORY DEVICE

The semiconductor memory device described in the abstract consists of multiple banks, a sense amplifier, an ECC code generation unit, an error correction unit, a first bus, and a second bus. The banks contain a data recording unit for rewritten data and an ECC code recording unit for corresponding error correction codes. The sense amplifier reads and writes data in each bank, the ECC code generation unit creates error correction codes, and the error correction unit fixes data errors using these codes. The first bus connects the sense amplifiers and the error correction unit, while the second bus links the ECC code generation unit to the sense amplifiers in each bank.

* The semiconductor memory device has multiple banks for storing data.
* Each bank includes a data recording unit and an ECC code recording unit.
* A sense amplifier is present in each bank to read and write data.
* An ECC code generation unit generates error correction codes.
* An error correction unit corrects data errors using the generated codes.
* The first bus connects the sense amplifiers and the error correction unit.
* The second bus connects the ECC code generation unit to the sense amplifiers in each bank.

Potential Applications:
- Data storage systems
- Error correction in memory devices
- Information technology industry

Problems Solved:
- Data errors in memory devices
- Efficient storage and retrieval of data
- Enhancing data reliability

Benefits:
- Improved data integrity
- Enhanced performance of memory devices
- Increased reliability of stored information

Commercial Applications:
Title: "Enhanced Error Correction Memory Device for Data Storage Systems"
This technology can be utilized in:
- Computer systems
- Servers
- Data centers
- Embedded systems

Questions about Semiconductor Memory Device:
1. How does the ECC code generation unit contribute to data reliability in the memory device?
The ECC code generation unit generates error correction codes that help in detecting and correcting data errors, thus enhancing data reliability.

2. What role does the sense amplifier play in the operation of each bank in the semiconductor memory device?
The sense amplifier is responsible for reading and writing data in each bank, facilitating data access and manipulation within the memory device.


==Original Abstract Submitted==

A semiconductor memory device includes a plurality of banks, a sense amplifier, an ECC code generation unit, an error correction unit, a first bus, and a second bus. The banks include a data recording unit in which rewritten data is to be written, and an ECC code recording unit in which an error correction code corresponding to the rewritten data is to be written. The sense amplifier is included in each of the banks and configured to read and write data from and to each of the banks. The ECC code generation unit generates the error correction code. The error correction unit corrects an error of data using the error correction code. The first bus connects the sense amplifier in each of the banks and the error correction unit. The second bus connects the ECC code generation unit and the sense amplifier in each of the banks.



[[Category:G06F11/10]]
[[Category:G06F12/0806]]
[[Category:CPC_G06F11/1044]]