View source for 18405339. MEASURING DEVICE AND MEASURING METHOD simplified abstract (Kioxia Corporation)

=MEASURING DEVICE AND MEASURING METHOD=


==Organization Name==

[[:Category:Kioxia Corporation|Kioxia Corporation]]


[[Category:Kioxia Corporation]]

==Inventor(s)==

[[:Category:Hiroyuki Tanizaki of Nagoya Aichi (JP)|Hiroyuki Tanizaki of Nagoya Aichi (JP)]][[Category:Hiroyuki Tanizaki of Nagoya Aichi (JP)]]

[[:Category:Kiminori Yoshino of Kuwana Mie (JP)|Kiminori Yoshino of Kuwana Mie (JP)]][[Category:Kiminori Yoshino of Kuwana Mie (JP)]]

[[:Category:Kaori Fumita of Yokkaichi Mie (JP)|Kaori Fumita of Yokkaichi Mie (JP)]][[Category:Kaori Fumita of Yokkaichi Mie (JP)]]

[[:Category:Hiroaki Shirakawa of Yokkaichi Mie (JP)|Hiroaki Shirakawa of Yokkaichi Mie (JP)]][[Category:Hiroaki Shirakawa of Yokkaichi Mie (JP)]]

[[:Category:Manabu Takakuwa of Tsu Mie (JP)|Manabu Takakuwa of Tsu Mie (JP)]][[Category:Manabu Takakuwa of Tsu Mie (JP)]]

[[:Category:Kentaro Kasa of Nagoya Aichi (JP)|Kentaro Kasa of Nagoya Aichi (JP)]][[Category:Kentaro Kasa of Nagoya Aichi (JP)]]

[[:Category:Soichi Inoue of Yokkaichi Mie (JP)|Soichi Inoue of Yokkaichi Mie (JP)]][[Category:Soichi Inoue of Yokkaichi Mie (JP)]]

[[:Category:Satoshi Tanaka of Yokohama Kanagawa (JP)|Satoshi Tanaka of Yokohama Kanagawa (JP)]][[Category:Satoshi Tanaka of Yokohama Kanagawa (JP)]]

==MEASURING DEVICE AND MEASURING METHOD - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18405339 titled 'MEASURING DEVICE AND MEASURING METHOD

'''Simplified Explanation''': 

The patent application describes a measuring device that uses multi-wavelength light to measure overlay on a wafer with memory holes and slits. The device analyzes reflected light to determine overlay accurately.

* Light source irradiates measurement spot on wafer with multi-wavelength light
* First imaging unit acquires intensity distribution image of reflected light
* Second imaging unit acquires second intensity distribution image
* Detection unit analyzes second image to measure overlay
* Overlay analysis unit selects measurement spot without slit based on first image

'''Key Features and Innovation''':

* Use of multi-wavelength light for accurate overlay measurement
* Analysis of reflected light intensity distribution images
* Selection of measurement spot without slit for precise overlay measurement

'''Potential Applications''':

* Semiconductor manufacturing
* Nanotechnology
* Quality control in production processes

'''Problems Solved''':

* Accurate measurement of overlay on wafers with memory holes and slits
* Improved quality control in manufacturing processes

'''Benefits''':

* Enhanced precision in overlay measurement
* Increased efficiency in production processes
* Reduction in manufacturing defects

'''Commercial Applications''':

Overlay measurement devices for semiconductor industry
Quality control tools for nanotechnology applications

'''Questions about Measuring Device''':

1. How does the device ensure accurate overlay measurement?
   - The device uses multi-wavelength light and analyzes reflected light intensity distribution images to measure overlay precisely.

2. What are the potential applications of this technology beyond semiconductor manufacturing?
   - The technology can be applied in nanotechnology and other industries requiring precise overlay measurement.


==Original Abstract Submitted==

A measuring device includes a light source that irradiates a measurement spot on a wafer formed with memory holes and slits with a multi-wavelength light, a first imaging unit that acquires a first pupil plane intensity distribution image of reflected light from the measurement spot, a second imaging unit that acquires a second pupil plane intensity distribution image of the reflected light, and a detection unit that analyzes the second pupil plane intensity distribution image to measure overlay. The measuring device includes an overlay analysis unit that acquires the first and second pupil plane intensity distribution images while moving a position of the measurement spot and selects a measurement spot not including the slit based on the first pupil plane intensity distribution image, and uses the overlay obtained by analyzing the second pupil plane intensity distribution image of the selected measurement spot as the overlay of the memory hole and a slit.



[[Category:G03F7/00]]
[[Category:G01N21/95]]
[[Category:G01N21/956]]
[[Category:CPC_G03F7/70633]]