View source for 18402991. INTEGRATED STEALTH LASER FOR WAFER EDGE TRIMMING PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=INTEGRATED STEALTH LASER FOR WAFER EDGE TRIMMING PROCESS=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Ming-Tung Wu of Hsinchu City (TW)|Ming-Tung Wu of Hsinchu City (TW)]][[Category:Ming-Tung Wu of Hsinchu City (TW)]]

[[:Category:Hsun-Chung Kuang of Hsinchu City (TW)|Hsun-Chung Kuang of Hsinchu City (TW)]][[Category:Hsun-Chung Kuang of Hsinchu City (TW)]]

[[:Category:Tung-He Chou of Hsinchu City (TW)|Tung-He Chou of Hsinchu City (TW)]][[Category:Tung-He Chou of Hsinchu City (TW)]]

==INTEGRATED STEALTH LASER FOR WAFER EDGE TRIMMING PROCESS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18402991 titled 'INTEGRATED STEALTH LASER FOR WAFER EDGE TRIMMING PROCESS

==Simplified Explanation==

The present disclosure describes an integrated chip fabrication device with a stealth laser apparatus for creating a stealth damage region within a substrate.

* The device includes a stealth laser apparatus positioned over a chuck that holds the substrate.
* An infrared camera is used to detect an alignment mark beneath the substrate, which is then used to align the stealth laser apparatus.
* Control circuitry operates the stealth laser apparatus to create a stealth damage region within the substrate, separating an inner region from an outer region.

== Potential Applications ==
This technology could be used in semiconductor manufacturing processes, specifically in creating precise damage regions within substrates for various applications such as integrated circuits.

== Problems Solved ==
This technology solves the problem of accurately creating damage regions within substrates without causing damage to surrounding areas, which is crucial in semiconductor fabrication processes.

== Benefits ==
The benefits of this technology include improved precision in creating damage regions, increased efficiency in semiconductor manufacturing, and reduced risk of damaging the substrate during the fabrication process.

== Potential Commercial Applications ==
One potential commercial application of this technology could be in the production of advanced integrated circuits for various electronic devices, where precise damage regions are required for specific functionalities.

== Possible Prior Art ==
One possible prior art for this technology could be laser ablation techniques used in semiconductor manufacturing processes to create patterns or structures within substrates. However, the specific use of a stealth laser apparatus for creating a stealth damage region as described in this disclosure may be a novel innovation.

=== Unanswered Questions ===

=== How does the alignment mark detection system ensure accurate alignment of the stealth laser apparatus over the chuck? ===
The abstract mentions that an infrared camera is used to detect an alignment mark below the substrate for aligning the stealth laser apparatus. However, the specific details of how this alignment process works and how it ensures precise alignment are not provided in the abstract.

=== What are the potential limitations or challenges of using a stealth laser apparatus to create a stealth damage region within a substrate? ===
While the abstract highlights the benefits and applications of this technology, it does not address any potential limitations or challenges that may arise in the implementation of a stealth laser apparatus for creating damage regions within substrates. Understanding these limitations could provide a more comprehensive view of the technology's feasibility and practicality in semiconductor manufacturing processes.


==Original Abstract Submitted==

In some embodiments, the present disclosure relates to an integrated chip fabrication device. The device includes a stealth laser apparatus arranged over a chuck configured to hold a substrate. An infrared camera is arranged over the chuck and configured to detect an alignment mark below the substrate. The alignment mark is used to align the stealth laser apparatus over the chuck. Control circuitry is configured to operate the stealth laser apparatus to form a stealth damage region at a location within the substrate that is determined based upon the alignment mark. The stealth damage region separates an inner region of the substrate from an outer region of the substrate.



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