View source for 18402974. VERTICAL SEMICONDUCTOR COMPONENT, IN PARTICULAR VERTICAL TRANSISTOR, WITH MINIMIZED SOURCE-DRAIN LEAKAGE CURRENTS simplified abstract (Robert Bosch GmbH)

=VERTICAL SEMICONDUCTOR COMPONENT, IN PARTICULAR VERTICAL TRANSISTOR, WITH MINIMIZED SOURCE-DRAIN LEAKAGE CURRENTS=


==Organization Name==

[[:Category:Robert Bosch GmbH|Robert Bosch GmbH]]


[[Category:Robert Bosch GmbH]]

==Inventor(s)==

[[:Category:Dragos Costachescu of Reutlingen (DE)|Dragos Costachescu of Reutlingen (DE)]][[Category:Dragos Costachescu of Reutlingen (DE)]]

[[:Category:Muhammad Alshahed of Stuttgart (DE)|Muhammad Alshahed of Stuttgart (DE)]][[Category:Muhammad Alshahed of Stuttgart (DE)]]

[[:Category:Daniel Krebs of Aufhausen (DE)|Daniel Krebs of Aufhausen (DE)]][[Category:Daniel Krebs of Aufhausen (DE)]]

[[:Category:Humberto Rodriguez Alvarez of Trento (IT)|Humberto Rodriguez Alvarez of Trento (IT)]][[Category:Humberto Rodriguez Alvarez of Trento (IT)]]

==VERTICAL SEMICONDUCTOR COMPONENT, IN PARTICULAR VERTICAL TRANSISTOR, WITH MINIMIZED SOURCE-DRAIN LEAKAGE CURRENTS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18402974 titled 'VERTICAL SEMICONDUCTOR COMPONENT, IN PARTICULAR VERTICAL TRANSISTOR, WITH MINIMIZED SOURCE-DRAIN LEAKAGE CURRENTS

The abstract describes a vertical semiconductor component, specifically a vertical transistor, with a vertically lower drain electrode and a semiconductor layer structure above it. The structure includes at least one drift layer and a trench-shaped conduction channel, where the lower end region of the conduction channel connects to the drift layer. A gate electrode is positioned above the conduction channel, which is conductively linked to a source electrode. The conduction channel features a gradation in a vertically extending wall portion, with outer and inner lateral portions connected by a reduced cross-section intermediate portion.

* Vertical semiconductor component, particularly a vertical transistor
* Features a vertically lower drain electrode and semiconductor layer structure
* Structure includes drift layer, trench-shaped conduction channel, gate electrode, and source electrode connection
* Conduction channel has a gradation in a vertically extending wall portion
* Outer and inner lateral portions connected by a reduced cross-section intermediate portion

Potential Applications:
- Power electronics
- High-frequency applications
- Switching devices

Problems Solved:
- Improved power efficiency
- Enhanced performance in high-frequency applications
- Better control in switching devices

Benefits:
- Higher power efficiency
- Increased performance capabilities
- Enhanced control and reliability

Commercial Applications:
Title: "Innovative Vertical Transistor for Advanced Power Electronics"
This technology can be utilized in:
- Power supplies
- Electric vehicles
- Renewable energy systems

Questions about Vertical Transistors:
1. How does the gradation in the conduction channel wall portion improve performance?
The gradation helps optimize the flow of current within the transistor, leading to better efficiency and control.

2. What sets vertical transistors apart from other semiconductor components?
Vertical transistors offer improved power handling capabilities and are well-suited for high-frequency applications.


==Original Abstract Submitted==

A vertical semiconductor component, in particular a vertical transistor. The component has a vertically lower drain electrode and a semiconductor layer structure arranged vertically above the drain electrode, the semiconductor layer structure having at least one drift layer and a trench-shaped conduction channel, wherein a vertically lower end region of the conduction channel adjoins the drift layer, and wherein a gate electrode is formed vertically above the conduction channel and the conduction channel is conductively connected to a source electrode. The conduction channel has, in an at least partially vertically extending wall portion, a gradation, which is delimited by an upper and a lower boundary surface of the conduction channel such that the wall portion has lateral outer and inner portions which are connected to one another via a lateral intermediate portion. The intermediate portion has a reduced cross-section compared with the outer and inner portions.



[[Category:H01L29/06]]
[[Category:H01L29/78]]
[[Category:CPC_H01L29/0603]]