View source for 18401251. USING DUPLICATE DATA FOR IMPROVING ERROR CORRECTION CAPABILITY simplified abstract (Micron Technology, Inc.)

=USING DUPLICATE DATA FOR IMPROVING ERROR CORRECTION CAPABILITY=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Jeffrey S. Mcneil of Nampa ID (US)|Jeffrey S. Mcneil of Nampa ID (US)]][[Category:Jeffrey S. Mcneil of Nampa ID (US)]]

[[:Category:Kishore Kumar Muchherla of Fremont CA (US)|Kishore Kumar Muchherla of Fremont CA (US)]][[Category:Kishore Kumar Muchherla of Fremont CA (US)]]

[[:Category:Sivagnanam Parthasarathy of Carlsbad CA (US)|Sivagnanam Parthasarathy of Carlsbad CA (US)]][[Category:Sivagnanam Parthasarathy of Carlsbad CA (US)]]

[[:Category:Patrick R. Khayat of San Diego CA (US)|Patrick R. Khayat of San Diego CA (US)]][[Category:Patrick R. Khayat of San Diego CA (US)]]

[[:Category:Sundararajan Sankaranarayanan of Fremont CA (US)|Sundararajan Sankaranarayanan of Fremont CA (US)]][[Category:Sundararajan Sankaranarayanan of Fremont CA (US)]]

[[:Category:Jeremy Binfet of Boise ID (US)|Jeremy Binfet of Boise ID (US)]][[Category:Jeremy Binfet of Boise ID (US)]]

[[:Category:Akira Goda of Setagaya (JP)|Akira Goda of Setagaya (JP)]][[Category:Akira Goda of Setagaya (JP)]]

==USING DUPLICATE DATA FOR IMPROVING ERROR CORRECTION CAPABILITY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18401251 titled 'USING DUPLICATE DATA FOR IMPROVING ERROR CORRECTION CAPABILITY

The patent application describes a system with a memory device and a processing device that can read data from memory cells, determine threshold voltages, and use redundant copies of data when necessary.

* The system reads data from a first set of memory cells and checks if the threshold voltage of the first memory cell is within a specific range.
* If the threshold voltage of the first memory cell is within the range, the system reads a second copy of the data from a different set of memory cells.
* It then checks if the threshold voltage of the second memory cell is within a different range.
* If the threshold voltage of the second memory cell is outside the range, the system uses the second copy of the data.

Potential Applications:
- This technology could be used in memory systems to improve data reliability and error correction.
- It could also be applied in storage devices to enhance data integrity and security.

Problems Solved:
- Addresses issues related to data corruption and loss in memory systems.
- Improves the overall reliability and accuracy of data storage and retrieval processes.

Benefits:
- Enhanced data reliability and integrity.
- Improved error correction capabilities.
- Increased security and protection against data loss.

Commercial Applications:
Title: Enhanced Data Reliability System for Memory Devices
This technology could be utilized in various industries such as data storage, cloud computing, and cybersecurity to ensure the integrity and security of critical information.

Prior Art:
There is prior art related to memory systems and error correction techniques, but this specific approach of using redundant copies based on threshold voltages appears to be novel.

Frequently Updated Research:
There may be ongoing research in the field of memory systems and data storage technologies that could further enhance the capabilities of this innovation.

Questions about the technology:
1. How does this system compare to traditional error correction methods in memory devices?
2. What are the potential limitations or challenges of implementing this technology in real-world applications?


==Original Abstract Submitted==

A system can include a memory device and a processing device, operatively coupled with the memory device, to perform operations including reading a first copy of data stored in a first set of memory cells comprising a first memory cell, determining whether a threshold voltage of the first memory cell is within a first range of threshold voltages, responsive to determining that the threshold voltage of the first memory cell is within the first range of threshold voltages, reading a second copy of the data stored in a second set of memory cells comprising a second memory cell, determining whether a threshold voltage of the second memory cell is within a second range of threshold voltages, and responsive to determining that the threshold voltage of the second memory cell is outside the second range, using the second copy of the data.



[[Category:G06F3/06]]
[[Category:G11C16/26]]
[[Category:CPC_G06F3/0659]]