View source for 18395265. SEMICONDUCTOR ELEMENT WITH BONDING LAYER HAVING FUNCTIONAL AND NON-FUNCTIONAL CONDUCTIVE PADS simplified abstract (ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.)

=SEMICONDUCTOR ELEMENT WITH BONDING LAYER HAVING FUNCTIONAL AND NON-FUNCTIONAL CONDUCTIVE PADS=


==Organization Name==

[[:Category:ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.|ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.]]


[[Category:ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.]]

==Inventor(s)==

[[:Category:Guilian Gao of San Jose CA (US)|Guilian Gao of San Jose CA (US)]][[Category:Guilian Gao of San Jose CA (US)]]

[[:Category:Gaius Gillman Fountain, Jr. of Youngsville NC (US)|Gaius Gillman Fountain, Jr. of Youngsville NC (US)]][[Category:Gaius Gillman Fountain, Jr. of Youngsville NC (US)]]

==SEMICONDUCTOR ELEMENT WITH BONDING LAYER HAVING FUNCTIONAL AND NON-FUNCTIONAL CONDUCTIVE PADS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18395265 titled 'SEMICONDUCTOR ELEMENT WITH BONDING LAYER HAVING FUNCTIONAL AND NON-FUNCTIONAL CONDUCTIVE PADS

'''Simplified Explanation''': This patent application describes a semiconductor element with a unique interconnect bonding layer that includes both functional and non-functional metal contact pads surrounded by a dielectric material. 

* The functional metal contact pads are exposed on the bonding surface and connected to a buried metal layer.
* Non-functional metal contact pads are distributed in regions with fewer functional metal contact pads, exposed on the bonding surface, and terminated at a partial depth of the functional metal pads.
* Both types of metal contact pads are formed using a single damascene process involving one etching step.

'''Key Features and Innovation''':
* Semiconductor element with interconnect bonding layer
* Functional and non-functional metal contact pads
* Dielectric material surrounding the metal contact pads
* Single damascene process for forming the metal contact pads

'''Potential Applications''':
* Semiconductor manufacturing
* Integrated circuits
* Electronics industry

'''Problems Solved''':
* Efficient formation of metal contact pads
* Improved connectivity in semiconductor elements
* Enhanced reliability of interconnect bonding

'''Benefits''':
* Simplified manufacturing process
* Enhanced performance of semiconductor elements
* Increased reliability and durability

'''Commercial Applications''':
* Semiconductor fabrication companies
* Electronics manufacturers
* Research and development in the semiconductor industry

'''Prior Art''''':
Prior art related to this technology may include patents or research papers on semiconductor interconnect structures, metal contact pad formation, and damascene processes in semiconductor manufacturing.

'''Frequently Updated Research''':
Researchers may be exploring new materials for dielectric layers, alternative methods for forming metal contact pads, or advancements in semiconductor interconnect technology.

'''Questions about Semiconductor Element with Interconnect Bonding Layer''':
1. What are the potential challenges in scaling up the production of semiconductor elements with this interconnect bonding layer technology?
2. How does the performance of devices using this technology compare to traditional semiconductor elements?


==Original Abstract Submitted==

A semiconductor element having an interconnect bonding layer with functional and non-functional metal contact pads therein surrounded by a dielectric material is disclosed. The functional metal contact pads are exposed to the bonding surface and are connected to a buried metal layer. The non-functional metal contact pads are distributed in the regions having no or less functional metal contact pads, and are exposed to the bonding surface and terminated at a partial depth of the functional metal pads. Each of the functional and non-functional metal contact pads is formed involving a one etching step single damascene process.



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