View source for 18395058. INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Yu-Yun Peng of Hsinchu (TW)|Yu-Yun Peng of Hsinchu (TW)]][[Category:Yu-Yun Peng of Hsinchu (TW)]]

[[:Category:Fu-Ting Yen of Hsinchu City (TW)|Fu-Ting Yen of Hsinchu City (TW)]][[Category:Fu-Ting Yen of Hsinchu City (TW)]]

[[:Category:Ting-Ting Chen of New Taipei City (TW)|Ting-Ting Chen of New Taipei City (TW)]][[Category:Ting-Ting Chen of New Taipei City (TW)]]

[[:Category:Keng-Chu Lin of Ping-Tung (TW)|Keng-Chu Lin of Ping-Tung (TW)]][[Category:Keng-Chu Lin of Ping-Tung (TW)]]

[[:Category:Tsu-Hsiu Perng of Zhubei City (TW)|Tsu-Hsiu Perng of Zhubei City (TW)]][[Category:Tsu-Hsiu Perng of Zhubei City (TW)]]

==INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18395058 titled 'INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES

==Simplified Explanation==

The semiconductor device described in the abstract includes a porous dielectric feature sandwiched between two semiconductor channel members, with a density smaller than that of silicon nitride.

* The semiconductor device includes a first semiconductor channel member and a second semiconductor channel member.
* A porous dielectric feature made of silicon and nitrogen is sandwiched between the first and second semiconductor channel members.
* The density of the porous dielectric feature is smaller than the density of silicon nitride.

== Potential Applications ==
The technology described in this patent application could be applied in the following areas:
* Semiconductor manufacturing
* Integrated circuits
* Electronic devices

== Problems Solved ==
The technology addresses the following issues:
* Improving semiconductor device performance
* Enhancing dielectric properties
* Increasing device efficiency

== Benefits ==
The technology offers the following benefits:
* Higher device reliability
* Improved signal processing
* Enhanced device durability

== Potential Commercial Applications ==
The technology could be utilized in various commercial applications, including:
* Consumer electronics
* Telecommunications
* Automotive industry

== Possible Prior Art ==
One possible prior art for this technology could be the use of silicon nitride in semiconductor devices as a dielectric material.

=== Unanswered Questions ===

=== How does the density of the porous dielectric feature impact the overall performance of the semiconductor device? ===
The abstract mentions that the density of the porous dielectric feature is smaller than that of silicon nitride, but it does not elaborate on how this difference affects the device's functionality and efficiency.

=== What specific manufacturing processes are involved in forming the porous dielectric feature with silicon and nitrogen? ===
While the abstract mentions the composition of the porous dielectric feature, it does not provide details on the specific methods or techniques used to create this feature in the semiconductor device.


==Original Abstract Submitted==

Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. In the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.



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[[Category:H01L21/02]]
[[Category:H01L29/66]]