View source for 18390360. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)

=SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Nam Jae Lee of Icheon-si Gyeonggi-do (KR)|Nam Jae Lee of Icheon-si Gyeonggi-do (KR)]][[Category:Nam Jae Lee of Icheon-si Gyeonggi-do (KR)]]

==SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18390360 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

==Simplified Explanation==

The present technology provides a semiconductor device with a stack of insulating patterns and conductive patterns, a channel layer with a first channel portion protruding out of the stack and a second channel portion within the stack, and a conductive line surrounding the first channel portion, which includes metal silicide.

* The semiconductor device includes a stack of insulating patterns and conductive patterns.
* The channel layer has a first channel portion protruding out of the stack and a second channel portion within the stack.
* The first channel portion includes metal silicide.

== Potential Applications ==
The semiconductor device could be used in:
* Integrated circuits
* Microprocessors
* Memory devices

== Problems Solved ==
This technology helps in:
* Improving performance of semiconductor devices
* Enhancing conductivity within the device

== Benefits ==
The benefits of this technology include:
* Increased efficiency
* Better signal transmission
* Higher processing speeds

== Potential Commercial Applications ==
The semiconductor device could be applied in:
* Electronics industry
* Semiconductor manufacturing sector

== Possible Prior Art ==
Prior art in semiconductor devices with similar structures and functionalities may exist, but specific examples are not provided in this context.

== Unanswered Questions ==

=== How does the metal silicide in the first channel portion enhance the performance of the semiconductor device? ===
The metal silicide in the first channel portion is known to improve conductivity, but the exact mechanism of its impact on device performance is not detailed in the abstract.

=== What specific types of insulating patterns and conductive patterns are used in the stack of the semiconductor device? ===
The abstract mentions the presence of insulating patterns and conductive patterns in the stack, but the specific materials or designs of these patterns are not specified.


==Original Abstract Submitted==

The present technology provides a semiconductor device. The semiconductor device includes a stack including insulating patterns and conductive patterns stacked alternately with each other, a channel layer including a first channel portion protruding out of the stack and a second channel portion in the stack, and passing through the stack, and a conductive line surrounding the first channel portion, and the first channel portion includes metal silicide.



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