View source for 18383940. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN-TYPE ACTIVE REGION simplified abstract (Samsung Electronics Co., Ltd.)

=METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN-TYPE ACTIVE REGION=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Seungju Hwang of Suwon-si (KR)|Seungju Hwang of Suwon-si (KR)]][[Category:Seungju Hwang of Suwon-si (KR)]]

[[:Category:Shigenobu Maeda of Suwon-si (KR)|Shigenobu Maeda of Suwon-si (KR)]][[Category:Shigenobu Maeda of Suwon-si (KR)]]

[[:Category:Myoungkyu Park of Suwon-si (KR)|Myoungkyu Park of Suwon-si (KR)]][[Category:Myoungkyu Park of Suwon-si (KR)]]

==METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN-TYPE ACTIVE REGION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18383940 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN-TYPE ACTIVE REGION

==Simplified Explanation==

The method described in the abstract involves manufacturing a semiconductor device by forming mandrel patterns, fin groups, and dummy fin groups on a substrate.

* The method starts by forming first mandrel patterns on a substrate at a specific pitch.
* Next, a first fin group and a first dummy fin group are created by patterning the substrate, with the first fin group adjacent to the first dummy fin group in a certain direction.
* The first dummy fin group is then removed, leaving behind the first fin group which consists of two fins arranged at a specific pitch.
* The second fin and the first dummy fin, which is adjacent to the second fin, are arranged at a different pitch that is greater than the first fin pitch.

== Potential Applications ==
This technology can be applied in the manufacturing of advanced semiconductor devices with improved performance and efficiency.

== Problems Solved ==
This method solves the problem of achieving higher density and better performance in semiconductor devices by optimizing the arrangement of fins on the substrate.

== Benefits ==
The benefits of this technology include increased efficiency, improved performance, and higher density of semiconductor devices.

== Potential Commercial Applications ==
The potential commercial applications of this technology include the production of faster and more energy-efficient electronic devices for various industries.

== Possible Prior Art ==
One possible prior art for this technology could be the use of dummy structures in semiconductor manufacturing processes to optimize device performance and density.

=== Unanswered Questions ===

=== How does this method compare to existing techniques in terms of cost-effectiveness? ===
This article does not provide information on the cost-effectiveness of this method compared to other existing techniques. 

=== What are the potential challenges in scaling up this manufacturing process for mass production? ===
The article does not address the potential challenges in scaling up this manufacturing process for mass production.


==Original Abstract Submitted==

A method of manufacturing a semiconductor device includes: forming a plurality of first mandrel patterns at a first mandrel pitch on a substrate; forming a first fin group and a first dummy fin group by patterning the substrate, wherein the first fin group is adjacent to the first dummy fin group in a first direction; and removing the first dummy fin group, wherein the first fin group includes a first fin and a second fin adjacent to each other and arranged at a first fin pitch in the first direction. The first dummy fin group includes a first dummy fin and a second dummy fin adjacent to each other and arranged at the first fin pitch in the first direction. The second fin and the first dummy fin, which is adjacent to the second fin, are arranged at a second fin pitch that is greater than the first fin pitch.



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