View source for 18383763. SEMICONDUCTOR LIGHT EMITTING DEVICE AND A DISPLAY DEVICE simplified abstract (LG Electronics Inc.)

=SEMICONDUCTOR LIGHT EMITTING DEVICE AND A DISPLAY DEVICE=


==Organization Name==

[[:Category:LG Electronics Inc.|LG Electronics Inc.]]


[[Category:LG Electronics Inc.]]

==Inventor(s)==

[[:Category:Byungjun Kang of Seoul (KR)|Byungjun Kang of Seoul (KR)]][[Category:Byungjun Kang of Seoul (KR)]]

[[:Category:Kiseong Jeon of Seoul (KR)|Kiseong Jeon of Seoul (KR)]][[Category:Kiseong Jeon of Seoul (KR)]]

[[:Category:Sunghyun Hwang of Seoul (KR)|Sunghyun Hwang of Seoul (KR)]][[Category:Sunghyun Hwang of Seoul (KR)]]

[[:Category:Junho Sung of Seoul (KR)|Junho Sung of Seoul (KR)]][[Category:Junho Sung of Seoul (KR)]]

[[:Category:Mihee Heo of Seoul (KR)|Mihee Heo of Seoul (KR)]][[Category:Mihee Heo of Seoul (KR)]]

[[:Category:Minwoo Lee of Seoul (KR)|Minwoo Lee of Seoul (KR)]][[Category:Minwoo Lee of Seoul (KR)]]

[[:Category:Hyungjo Park of Seoul (KR)|Hyungjo Park of Seoul (KR)]][[Category:Hyungjo Park of Seoul (KR)]]

==SEMICONDUCTOR LIGHT EMITTING DEVICE AND A DISPLAY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18383763 titled 'SEMICONDUCTOR LIGHT EMITTING DEVICE AND A DISPLAY DEVICE

The semiconductor light emitting device described in the patent application includes a light emitting layer, a passivation layer on the upper and side surfaces of the light emitting layer, a protective layer on the lower and side surfaces of the light emitting layer, a first electrode between the light emitting layer and the protective layer, and a second electrode between the light emitting layer and the passivation layer. The inner angle between the side surface and the lower surface of the light emitting layer can have an obtuse angle.

* The device features a unique combination of layers and electrodes to enhance its performance.
* The passivation and protective layers provide additional protection to the light emitting layer.
* The specific angle between the side and lower surfaces of the light emitting layer contributes to the device's efficiency.
* The first and second electrodes play a crucial role in the functioning of the device.
* Overall, the design of this semiconductor light emitting device aims to improve its overall performance and longevity.

### Potential Applications
The semiconductor light emitting device can be used in various lighting applications, display technologies, and optoelectronic devices.

### Problems Solved
This technology addresses issues related to the protection and efficiency of light emitting devices, enhancing their overall performance and durability.

### Benefits
The device offers improved protection, efficiency, and longevity compared to traditional light emitting devices. It also provides enhanced performance in various applications.

### Commercial Applications
The semiconductor light emitting device can be utilized in the manufacturing of LED lights, display screens, and other optoelectronic products. Its improved performance and durability make it a valuable asset in the market.

### Prior Art
Readers can explore prior patents related to semiconductor light emitting devices, passivation layers, protective layers, and electrode designs to gain a deeper understanding of the existing technology in this field.

### Frequently Updated Research
Stay updated on the latest research developments in semiconductor light emitting devices, passivation techniques, and electrode innovations to remain informed about advancements in the industry.

#### Questions about Semiconductor Light Emitting Devices
1. What are the key components of a semiconductor light emitting device?
2. How do passivation and protective layers contribute to the performance of such devices?


==Original Abstract Submitted==

Discussed is a semiconductor light emitting device can include a light emitting layer, a passivation layer on an upper surface and a side surface of the light emitting layer, a protective layer on a lower surface and the side surface of the light emitting layer, a first electrode between the light emitting layer and the protective layer, and a second electrode between the light emitting layer and the passivation layer. An inner angle between the side surface and the lower surface of the light emitting layer can have an obtuse angle.



[[Category:H01L33/62]]
[[Category:H01L25/075]]
[[Category:H01L33/38]]
[[Category:CPC_H01L33/62]]