View source for 18383035. SEMICONDUCTOR DEVICE (UNITED MICROELECTRONICS CORP.)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:UNITED MICROELECTRONICS CORP.|UNITED MICROELECTRONICS CORP.]]


[[Category:UNITED MICROELECTRONICS CORP.]]

==Inventor(s)==

[[:Category:Chun-Ting Chiang of Kaohsiung City TW|Chun-Ting Chiang of Kaohsiung City TW]][[Category:Chun-Ting Chiang of Kaohsiung City TW]]

[[:Category:Tien-Shan Hsu of Tainan City TW|Tien-Shan Hsu of Tainan City TW]][[Category:Tien-Shan Hsu of Tainan City TW]]

[[:Category:Po-Chang Lin of Tainan City TW|Po-Chang Lin of Tainan City TW]][[Category:Po-Chang Lin of Tainan City TW]]

[[:Category:Lung-En Kuo of Tainan City TW|Lung-En Kuo of Tainan City TW]][[Category:Lung-En Kuo of Tainan City TW]]

[[:Category:Hao-Che Feng of Kaohsiung City TW|Hao-Che Feng of Kaohsiung City TW]][[Category:Hao-Che Feng of Kaohsiung City TW]]

[[:Category:Ping-Wei Huang of Pingtung County TW|Ping-Wei Huang of Pingtung County TW]][[Category:Ping-Wei Huang of Pingtung County TW]]

==SEMICONDUCTOR DEVICE==


This abstract first appeared for US patent application 18383035 titled 'SEMICONDUCTOR DEVICE

==Original Abstract Submitted==

A semiconductor device includes a first fin-shaped structure and a second fin-shaped structure on a substrate, a bump between the first fin-shaped structure and the second fin-shaped structure, a first recess between the first fin-shaped structure and the bump, and a second recess between the second fin-shaped structure and the bump. Preferably, a top surface of the bump includes a curve concave upward, a width of the bump is greater than twice the width of the first fin-shaped structure, and a height of the bump is less than one fourth of the height of the first fin-shaped structure.



[[Category:H01L29/06]]
[[Category:H01L21/8234]]
[[Category:H01L27/088]]
[[Category:H01L29/66]]
[[Category:H01L29/78]]
[[Category:CPC_H10D62/117]]