View source for 18379731. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Byeol Hae Eom of Suwon-si (KR)|Byeol Hae Eom of Suwon-si (KR)]][[Category:Byeol Hae Eom of Suwon-si (KR)]]

[[:Category:Byung Ha Choi of Suwon-si (KR)|Byung Ha Choi of Suwon-si (KR)]][[Category:Byung Ha Choi of Suwon-si (KR)]]

[[:Category:Keun Hwi Cho of Suwon-si (KR)|Keun Hwi Cho of Suwon-si (KR)]][[Category:Keun Hwi Cho of Suwon-si (KR)]]

[[:Category:Sung Won Kim of Suwon-si (KR)|Sung Won Kim of Suwon-si (KR)]][[Category:Sung Won Kim of Suwon-si (KR)]]

[[:Category:Yuri Masuoka of Suwon-si (KR)|Yuri Masuoka of Suwon-si (KR)]][[Category:Yuri Masuoka of Suwon-si (KR)]]

[[:Category:Won Cheol Jeong of Suwon-si (KR)|Won Cheol Jeong of Suwon-si (KR)]][[Category:Won Cheol Jeong of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18379731 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract consists of multiple element separation structures and active patterns, as well as gate electrodes extending in different directions.

* The device includes three element separation structures arranged sequentially along one direction and extending in another direction.
* Active patterns extend between the element separation structures, with different widths in the second direction.
* Gate electrodes are present on the active patterns, with multiple electrodes on the second active pattern.

Potential Applications:
- This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications.
- It can enhance the performance and efficiency of integrated circuits in electronic devices.

Problems Solved:
- This technology addresses the need for improved semiconductor device structures with optimized active patterns and gate electrodes.

Benefits:
- Enhanced performance and efficiency of semiconductor devices.
- Improved integration and functionality in electronic applications.

Commercial Applications:
- The technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics.
- It has the potential to impact the semiconductor industry by offering more advanced and efficient devices.

Questions about the technology:
1. How does the width difference between the active patterns impact the performance of the semiconductor device?
2. What are the specific advantages of having multiple gate electrodes on the second active pattern?

Frequently Updated Research:
- Stay updated on the latest advancements in semiconductor device technology to ensure optimal performance and efficiency in electronic applications.


==Original Abstract Submitted==

A semiconductor device includes a first element separation structure, a second element separation structure, and a third element separation structure sequentially disposed along a first direction and extending in a second direction intersecting the first direction; a first active pattern extending in the first direction between the first element separation structure and the second element separation structure; a second active pattern extending in the first direction between the second element separation structure and the third element separation structure and separated from the first active pattern by the second element separation structure; a first gate electrode extending in the second direction on the first active pattern; and a plurality of second gate electrodes extending in the second direction on the second active pattern, wherein a width of the first active pattern in the second direction is greater than a width of the second active pattern in the second direction.



[[Category:H01L27/092]]
[[Category:H01L29/06]]
[[Category:H01L29/417]]
[[Category:H01L29/423]]
[[Category:H01L29/775]]
[[Category:CPC_H01L27/092]]