View source for 18379106. EUV PHOTORESIST AND UNDERLAYER ADHESION MODULATION simplified abstract (Applied Materials, Inc.)

=EUV PHOTORESIST AND UNDERLAYER ADHESION MODULATION=


==Organization Name==

[[:Category:Applied Materials, Inc.|Applied Materials, Inc.]]


[[Category:Applied Materials, Inc.]]

==Inventor(s)==

[[:Category:Zhiyu Huang of Sunnyvale CA (US)|Zhiyu Huang of Sunnyvale CA (US)]][[Category:Zhiyu Huang of Sunnyvale CA (US)]]

[[:Category:BOCHENG Cao of Santa Clara CA (US)|BOCHENG Cao of Santa Clara CA (US)]][[Category:BOCHENG Cao of Santa Clara CA (US)]]

[[:Category:SIYU Zhu of Sunnyvale CA (US)|SIYU Zhu of Sunnyvale CA (US)]][[Category:SIYU Zhu of Sunnyvale CA (US)]]

[[:Category:HANG Yu of San Jose CA (US)|HANG Yu of San Jose CA (US)]][[Category:HANG Yu of San Jose CA (US)]]

[[:Category:YUNG-CHEN Lin of Gardena CA (US)|YUNG-CHEN Lin of Gardena CA (US)]][[Category:YUNG-CHEN Lin of Gardena CA (US)]]

[[:Category:CHI-I Lang of CUPERTINO CA (US)|CHI-I Lang of CUPERTINO CA (US)]][[Category:CHI-I Lang of CUPERTINO CA (US)]]

==EUV PHOTORESIST AND UNDERLAYER ADHESION MODULATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18379106 titled 'EUV PHOTORESIST AND UNDERLAYER ADHESION MODULATION

'''Simplified Explanation:'''
The patent application describes a method for developing a patterning stack, involving treating an underlayer to improve adhesion with photoresist and scum removal.

'''Key Features and Innovation:'''
* Method involves providing a patterning stack with an underlayer and photoresist.
* Treatment of underlayer to enhance adhesion with scum.
* Removal of scum from the surface of the underlayer.

'''Potential Applications:'''
This technology could be applied in the semiconductor industry for advanced lithography processes.

'''Problems Solved:'''
The method addresses issues related to adhesion between layers in patterning stacks, specifically dealing with scum formation.

'''Benefits:'''
* Improved adhesion strength between layers.
* Enhanced precision in patterning processes.
* Reduction of defects in semiconductor manufacturing.

'''Commercial Applications:'''
Advanced lithography systems in semiconductor manufacturing could benefit from this method, leading to higher quality and more reliable electronic devices.

'''Prior Art:'''
Prior research in the field of lithography and semiconductor manufacturing may provide insights into similar methods for improving adhesion between layers.

'''Frequently Updated Research:'''
Stay updated on the latest advancements in lithography techniques and materials to enhance the performance of patterning stacks.

'''Questions about Patterning Stack Development:'''
1. How does the treatment of the underlayer impact the adhesion strength with the photoresist?
2. What are the potential challenges in implementing this method in large-scale semiconductor production?


==Original Abstract Submitted==

Embodiments disclosed herein include a method of developing a patterning stack. In an embodiment, the method comprises providing a patterning stack, where the patterning stack comprises an underlayer and a photoresist over the underlayer, and where the underlayer has a first adhesion strength with the photoresist. The method may further comprise exposing and developing the photoresist with electromagnetic radiation and a developer, where scum remains on a surface of the underlayer. In an embodiment, the method further comprises treating the underlayer so that the underlayer has a second adhesion strength with the scum, and removing the scum.



[[Category:G03F7/11]]
[[Category:CPC_G03F7/11]]