View source for 18378541. THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY APPARATUS COMPRISING THE SAME simplified abstract (LG DISPLAY CO., LTD.)

=THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY APPARATUS COMPRISING THE SAME=


==Organization Name==

[[:Category:LG DISPLAY CO., LTD.|LG DISPLAY CO., LTD.]]


[[Category:LG DISPLAY CO., LTD.]]

==Inventor(s)==

[[:Category:JeeHo Park of Paju-si (KR)|JeeHo Park of Paju-si (KR)]][[Category:JeeHo Park of Paju-si (KR)]]

[[:Category:Sohyung Lee of Paju-si (KR)|Sohyung Lee of Paju-si (KR)]][[Category:Sohyung Lee of Paju-si (KR)]]

[[:Category:Hyunki Kim of Paju-si (KR)|Hyunki Kim of Paju-si (KR)]][[Category:Hyunki Kim of Paju-si (KR)]]

==THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY APPARATUS COMPRISING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18378541 titled 'THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY APPARATUS COMPRISING THE SAME

'''Simplified Explanation''': 

This patent application describes a thin film transistor with specific structural features, including an active layer, gate electrode, source electrode, and drain electrode. The active layer contains a crystalline structure and connection portions with amorphous portions.

* The thin film transistor includes an active layer, gate electrode, source electrode, and drain electrode.
* The active layer has a channel overlapping with the gate electrode and connection portions on each side of the channel.
* The channel has a crystalline structure, while the connection portions have amorphous portions contacting the channel.

'''Key Features and Innovation''':

* Thin film transistor structure with specific components and connections.
* Active layer with a crystalline channel and amorphous connection portions.
* Optimization for efficient electronic performance.

'''Potential Applications''':

* Display technologies.
* Integrated circuits.
* Sensor devices.

'''Problems Solved''':

* Enhancing transistor performance.
* Improving electronic device efficiency.
* Facilitating advanced electronic applications.

'''Benefits''':

* Higher performance levels.
* Increased device reliability.
* Enhanced functionality in electronic devices.

'''Commercial Applications''''':

* Display manufacturing industry.
* Semiconductor technology sector.
* Consumer electronics market.

'''Prior Art''''':

Prior art related to thin film transistors and semiconductor device structures.

'''Frequently Updated Research''''':

Ongoing research on thin film transistor technology and semiconductor materials.

'''Questions about Thin Film Transistors''':

1. What are the key components of a thin film transistor?
2. How does the crystalline structure of the channel impact transistor performance?


==Original Abstract Submitted==

A thin film transistor can include an active layer; a gate electrode at least partially overlapping with the active layer; and a source electrode and a drain electrode spaced apart from each other and connected to the active layer, respectively. Also, the active layer includes a channel overlapping with the gate electrode; a first connection portion connected to a first side of the channel portion; and a second connection portion connected to a second side of the channel portion. Also, the channel has a crystalline structure, the first connection portion includes a first amorphous portion contacting the channel, and the second connection portion includes a second amorphous portion contacting the channel.



[[Category:H01L27/12]]
[[Category:H01L29/786]]
[[Category:CPC_H01L27/1225]]