View source for 18376450. ELECTROSTATIC DISCHARGE PROTECTION DEVICE (UNITED MICROELECTRONICS CORP.)

=ELECTROSTATIC DISCHARGE PROTECTION DEVICE=


==Organization Name==

[[:Category:UNITED MICROELECTRONICS CORP.|UNITED MICROELECTRONICS CORP.]]


[[Category:UNITED MICROELECTRONICS CORP.]]

==Inventor(s)==

[[:Category:Tzu-Hsin Chen of Yilan County (TW)|Tzu-Hsin Chen of Yilan County (TW)]][[Category:Tzu-Hsin Chen of Yilan County (TW)]]

[[:Category:Mei-Ling Chao of Tainan City (TW)|Mei-Ling Chao of Tainan City (TW)]][[Category:Mei-Ling Chao of Tainan City (TW)]]

[[:Category:Tien-Hao Tang of Hsinchu City (TW)|Tien-Hao Tang of Hsinchu City (TW)]][[Category:Tien-Hao Tang of Hsinchu City (TW)]]

[[:Category:Kuan-cheng Su of Taipei City (TW)|Kuan-cheng Su of Taipei City (TW)]][[Category:Kuan-cheng Su of Taipei City (TW)]]

==ELECTROSTATIC DISCHARGE PROTECTION DEVICE==


This abstract first appeared for US patent application 18376450 titled 'ELECTROSTATIC DISCHARGE PROTECTION DEVICE

==Original Abstract Submitted==

An electrostatic discharge protection device includes a substrate, a well region of a first conductivity type in the substrate, a drain field region and a source field region of a second conductivity type in the well region, a gate structure on the well region and between the drain field region and the source field region, a drain contact region and a source contact region of the second conductivity type respectively in the drain field region and the source field region, a first isolation region in the drain field region and between the drain contact region and the gate structure, and a drain doped region of the first conductivity in the drain field region and between a portion of a bottom surface of the drain contact region and the drain field region.



[[Category:H01L29/78]]
[[Category:H01L27/02]]
[[Category:H01L29/06]]
[[Category:H01L29/08]]
[[Category:CPC_H01L29/7816]]