View source for 18372325. INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Wooyeol Maeng of Suwon-si (KR)|Wooyeol Maeng of Suwon-si (KR)]][[Category:Wooyeol Maeng of Suwon-si (KR)]]

[[:Category:Hyungjin Lee of Suwon-si (KR)|Hyungjin Lee of Suwon-si (KR)]][[Category:Hyungjin Lee of Suwon-si (KR)]]

[[:Category:Huichul Shin of Suwon-si (KR)|Huichul Shin of Suwon-si (KR)]][[Category:Huichul Shin of Suwon-si (KR)]]

==INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18372325 titled 'INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR

The abstract describes an integrated circuit device with specific features:

* Semiconductor substrate with first and second conductivity type wells
* Source region in the second conductivity type well
* Drain region in the first conductivity type well
* Recess insulating layer between the source and drain regions, consisting of upper and lower insulating units
* Gate electrode layer on the first and second conductivity type wells
* Asymmetric shape of the recess insulating layer

Potential Applications:
- This technology can be used in the manufacturing of integrated circuits for various electronic devices.
- It can improve the performance and efficiency of semiconductor devices.

Problems Solved:
- Provides better isolation between the source and drain regions, reducing leakage and improving overall device performance.
- Enhances the reliability and longevity of the integrated circuit device.

Benefits:
- Increased efficiency and performance of semiconductor devices.
- Improved reliability and longevity of integrated circuits.
- Enhanced isolation between different regions of the device.

Commercial Applications:
Title: Advanced Integrated Circuit Technology for Enhanced Device Performance
This technology can be utilized in the production of smartphones, computers, and other electronic devices to enhance their performance and efficiency. It can also be integrated into industrial applications where high-performance integrated circuits are required.

Prior Art:
There is no specific information provided on prior art related to this technology in the abstract.

Frequently Updated Research:
There is no information provided on frequently updated research related to this technology in the abstract.

Questions about Integrated Circuit Device Technology:

Question 1: How does the asymmetric shape of the recess insulating layer contribute to the performance of the integrated circuit device?
Answer: The asymmetric shape of the recess insulating layer helps in improving the isolation between the source and drain regions, reducing leakage and enhancing the overall efficiency of the device.

Question 2: What are the key advantages of using first and second conductivity type wells in the semiconductor substrate?
Answer: The first and second conductivity type wells allow for better control of the flow of current within the integrated circuit device, leading to improved performance and reliability.


==Original Abstract Submitted==

An integrated circuit device includes: a semiconductor substrate; first and second conductivity type wells formed in the semiconductor substrate; a source region formed in the second conductivity type well; a drain region formed in the first conductivity type well; a recess insulating layer disposed between the source region and the drain region, and including an upper insulating unit and a lower insulating unit, wherein the upper insulating unit fills an upper substrate recess that extends from an upper surface of the first conductivity type well, and wherein the lower insulating unit fills a lower substrate recess that extends from the upper substrate recess; and a gate electrode layer arranged on the first and second conductivity type wells, and wherein the recess insulating layer has a shape in which both sides thereof are asymmetric with respect to a center of the upper insulating unit.



[[Category:H01L29/78]]
[[Category:H01L29/06]]