View source for 18369321. HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)

=HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE=


==Organization Name==

[[:Category:NANYA TECHNOLOGY CORPORATION|NANYA TECHNOLOGY CORPORATION]]


[[Category:NANYA TECHNOLOGY CORPORATION]]

==Inventor(s)==

[[:Category:WEI-CHUAN Fang of NEW TAIPEI CITY (TW)|WEI-CHUAN Fang of NEW TAIPEI CITY (TW)]][[Category:WEI-CHUAN Fang of NEW TAIPEI CITY (TW)]]

==HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18369321 titled 'HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE

==Simplified Explanation==

The abstract describes a patent application for a hardmask structure and a method of forming a semiconductor structure. The hardmask structure includes a first ashable hardmask, a first dielectric antireflective coating, and a second ashable hardmask. The stress of the first ashable hardmask is between -100 MPa to 100 MPa.

* First ashable hardmask
* First dielectric antireflective coating
* Second ashable hardmask
* Stress range of first ashable hardmask: -100 MPa to 100 MPa

== Potential Applications ==
This technology can be applied in the semiconductor industry for the fabrication of advanced semiconductor devices.

== Problems Solved ==
1. Improved precision in semiconductor manufacturing processes.
2. Enhanced performance of semiconductor devices.

== Benefits ==
1. Increased efficiency in semiconductor fabrication.
2. Higher quality and reliability of semiconductor structures.

== Potential Commercial Applications ==
Optimizing Hardmask Structures for Semiconductor Fabrication

== Possible Prior Art ==
Prior art related to hardmask structures and semiconductor fabrication processes may exist, but specific examples are not provided in the abstract.

== Unanswered Questions ==
=== How does this technology compare to existing hardmask structures in terms of performance and cost-effectiveness? ===
The abstract does not provide a comparison with existing hardmask structures in the market.

=== What specific semiconductor devices or applications can benefit the most from this technology? ===
The abstract does not specify the targeted semiconductor devices or applications for this technology.


==Original Abstract Submitted==

A hardmask structure and a method of forming a semiconductor structure are provided. The hardmask structure includes a first ashable hardmask, a first dielectric antireflective coating, and a second ashable hardmask. The first dielectric antireflective coating is disposed on the first ashable hardmask. The second ashable hardmask is disposed on the first dielectric antireflective coating. A stress of the first ashable hardmask is from about −100 MPa to about 100 MPa.



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