View source for 18369311. SEMICONDUCTOR STRUCTURE HAVING DUMMY CONDUCTIVE MEMBER AND MANUFACTURING METHOD THEREOF simplified abstract (NANYA TECHNOLOGY CORPORATION)

=SEMICONDUCTOR STRUCTURE HAVING DUMMY CONDUCTIVE MEMBER AND MANUFACTURING METHOD THEREOF=


==Organization Name==

[[:Category:NANYA TECHNOLOGY CORPORATION|NANYA TECHNOLOGY CORPORATION]]


[[Category:NANYA TECHNOLOGY CORPORATION]]

==Inventor(s)==

[[:Category:YI-JEN Lo of NEW TAIPEI CITY (TW)|YI-JEN Lo of NEW TAIPEI CITY (TW)]][[Category:YI-JEN Lo of NEW TAIPEI CITY (TW)]]

==SEMICONDUCTOR STRUCTURE HAVING DUMMY CONDUCTIVE MEMBER AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18369311 titled 'SEMICONDUCTOR STRUCTURE HAVING DUMMY CONDUCTIVE MEMBER AND MANUFACTURING METHOD THEREOF

==Simplified Explanation==

The present application provides a semiconductor structure with a dummy conductive member and a method of manufacturing the semiconductor structure. The structure includes a first wafer with a first substrate, a first dielectric layer, a first bonding layer, a first via, and a first dummy conductive member. It also includes a second wafer with a second bonding layer, a second via, a second dummy conductive member, a second dielectric layer, and a second substrate.

* Explanation of the patent:
  * Semiconductor structure with dummy conductive members for improved performance.
  * Method of manufacturing the semiconductor structure with precise placement of components.
  * Utilizes multiple wafers and layers for enhanced functionality.

* Potential applications of this technology:
  * Semiconductor industry for advanced integrated circuits.
  * Electronics manufacturing for improved device performance.
  * Research and development for cutting-edge technology.

* Problems solved by this technology:
  * Enhanced conductivity and signal transmission.
  * Improved reliability and durability of semiconductor devices.
  * Facilitates miniaturization and increased functionality of electronic components.

* Benefits of this technology:
  * Higher performance and efficiency of semiconductor devices.
  * Cost-effective manufacturing process.
  * Enables development of complex electronic systems.

* Potential commercial applications of this technology:
  * Consumer electronics such as smartphones and tablets.
  * Automotive industry for advanced vehicle systems.
  * Aerospace sector for high-performance electronics.

* Possible prior art:
  * Previous patents related to semiconductor structures with dummy conductive members.
  * Research papers on wafer bonding techniques in semiconductor manufacturing.

## Unanswered Questions

### How does this technology compare to existing methods of semiconductor manufacturing?
This article does not provide a direct comparison with traditional semiconductor manufacturing techniques. It would be beneficial to understand the specific advantages and limitations of this new approach in relation to established methods.

### What are the potential challenges in scaling up production of semiconductor structures with dummy conductive members?
The article does not address the scalability of this technology for mass production. It would be important to consider factors such as cost, efficiency, and yield rates when implementing this innovation on a larger scale.


==Original Abstract Submitted==

The present application provides a semiconductor structure having a dummy conductive member, and a manufacturing method of the semiconductor structure. The semiconductor structure includes a first wafer including a first substrate, a first dielectric layer over the first substrate, a first bonding layer over the first dielectric layer, a first via extending through the first bonding layer, and a first dummy conductive member disposed adjacent to the first via and extending partially through the first bonding layer; and a second wafer including a second bonding layer over the first bonding layer, a second via extending through the second bonding layer, a second dummy conductive member disposed adjacent to the second via and extending partially through the second bonding layer, a second dielectric layer over the second bonding layer, and a second substrate over the second dielectric layer.



[[Category:H01L23/00]]