View source for 18367753. SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER simplified abstract (RESONAC CORPORATION)

=SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER=


==Organization Name==

[[:Category:RESONAC CORPORATION|RESONAC CORPORATION]]


[[Category:RESONAC CORPORATION]]

==Inventor(s)==

[[:Category:Kensho Tanaka of Tokyo (JP)|Kensho Tanaka of Tokyo (JP)]][[Category:Kensho Tanaka of Tokyo (JP)]]

[[:Category:Rimpei Kindaichi of Tokyo (JP)|Rimpei Kindaichi of Tokyo (JP)]][[Category:Rimpei Kindaichi of Tokyo (JP)]]

[[:Category:Marie Ohuchi of Tokyo (JP)|Marie Ohuchi of Tokyo (JP)]][[Category:Marie Ohuchi of Tokyo (JP)]]

==SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18367753 titled 'SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

==Simplified Explanation==

The present embodiment describes a SiC epitaxial wafer with a SiC substrate and a SiC epitaxial layer. The key feature of this wafer is the uniformity of carrier concentration in the epitaxial layer, which is less than 3.8%. This uniformity is calculated by dividing the difference between the maximum and minimum values of carrier concentrations along a straight line passing through the center of the epitaxial layer by the average value.

* SiC epitaxial wafer with SiC substrate and epitaxial layer
* Carrier concentration uniformity of less than 3.8%
* Calculation based on maximum, minimum, and average values of carrier concentrations

== Potential Applications ==
The technology can be applied in:
* Power electronics
* High-frequency devices
* Sensors

== Problems Solved ==
This technology addresses:
* Inconsistencies in carrier concentration in SiC epitaxial layers
* Performance variability in SiC-based devices

== Benefits ==
The benefits of this technology include:
* Improved device performance
* Enhanced reliability
* Consistent results in manufacturing

== Potential Commercial Applications ==
Potential commercial applications include:
* Semiconductor industry
* Power electronics manufacturers
* Sensor technology companies

== Possible Prior Art ==
Prior art in SiC epitaxial wafer technology may include:
* Research papers on SiC epitaxial growth techniques
* Patents related to SiC substrate manufacturing

=== Unanswered Questions ===

== How does this technology compare to traditional SiC epitaxial wafers in terms of performance and reliability? ==
The article does not provide a direct comparison between this technology and traditional SiC epitaxial wafers in terms of performance and reliability. Further research or testing may be needed to evaluate the differences.

== What are the potential challenges in scaling up the production of SiC epitaxial wafers with such precise carrier concentration uniformity? ==
The article does not address the potential challenges in scaling up the production of SiC epitaxial wafers with precise carrier concentration uniformity. Factors such as cost, manufacturing processes, and yield rates could be significant challenges that need to be explored further.


==Original Abstract Submitted==

A SiC epitaxial wafer according to the present embodiment includes: a SiC substrate; and a SiC epitaxial layer laminated on the SiC substrate, in which a carrier concentration uniformity of the SiC epitaxial layer is less than 3.8%, and the carrier concentration uniformity is a value obtained by dividing, by an average value, a difference between a maximum value and a minimum value of carrier concentrations of the SiC epitaxial layer measured along a straight line passing through a center of the SiC epitaxial layer when seen in a plan view.



[[Category:C30B29/36]]
[[Category:C30B25/20]]