View source for 18366322. APPARATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING FOCUSED ION BEAM AND SCANNING ELECTRON MICROSCOPE SUPPORTED BY ELECTRON DIFFRACTION PATTERN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=APPARATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING FOCUSED ION BEAM AND SCANNING ELECTRON MICROSCOPE SUPPORTED BY ELECTRON DIFFRACTION PATTERN=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Kunsu Kim of SUWON-SI (KR)|Kunsu Kim of SUWON-SI (KR)]][[Category:Kunsu Kim of SUWON-SI (KR)]]

==APPARATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING FOCUSED ION BEAM AND SCANNING ELECTRON MICROSCOPE SUPPORTED BY ELECTRON DIFFRACTION PATTERN - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18366322 titled 'APPARATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING FOCUSED ION BEAM AND SCANNING ELECTRON MICROSCOPE SUPPORTED BY ELECTRON DIFFRACTION PATTERN

'''Simplified Explanation:'''
The patent application describes an apparatus for manufacturing semiconductor devices that uses both an electron beam and an ion beam to irradiate a sample, with a detector to simultaneously detect emitted electrons from the sample.

'''Key Features and Innovation:'''
* Apparatus includes an electron gun for generating an input electron beam.
* Utilizes an ion beam device to generate an ion beam for irradiating the sample.
* Detector includes an electron backscatter diffraction detector for detecting emitted electrons.
* Simultaneous detection of emitted electrons when the sample is irradiated by the ion beam.

'''Potential Applications:'''
This technology can be used in the manufacturing of semiconductor devices, specifically in analyzing the structure and composition of samples.

'''Problems Solved:'''
This technology addresses the need for precise and simultaneous detection of emitted electrons during the manufacturing process of semiconductor devices.

'''Benefits:'''
* Improved accuracy in analyzing the structure and composition of semiconductor samples.
* Enhanced efficiency in the manufacturing process.
* Enables better quality control in semiconductor device production.

'''Commercial Applications:'''
The technology can be applied in semiconductor manufacturing companies to enhance the quality control processes and improve the overall efficiency of production.

'''Questions about Semiconductor Device Manufacturing:'''
1. How does the simultaneous detection of emitted electrons improve the manufacturing process of semiconductor devices?
2. What are the specific advantages of using both electron and ion beams in semiconductor device manufacturing?

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==Original Abstract Submitted==

An apparatus for manufacturing semiconductor devices is disclosed. The apparatus includes an electron gun configured to generate an input electron beam and irradiate a sample with the input electron beam, an ion beam device configured to generate an ion beam and irradiate the sample with the ion beam, and a detector configured to detect emitted electrons from the sample. The detector includes an electron backscatter diffraction detector and detects the emitted electrons simultaneously when the sample is irradiated by the ion beam.



[[Category:H01J37/244]]
[[Category:H01J37/147]]
[[Category:H01J37/20]]
[[Category:H01J37/28]]
[[Category:CPC_H01J37/244]]