View source for 18362662. MEMORY DEVICE WITH SELECTIVE PRECHARGING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=MEMORY DEVICE WITH SELECTIVE PRECHARGING=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Ed Mccombs of Hsinchu (TW)|Ed Mccombs of Hsinchu (TW)]][[Category:Ed Mccombs of Hsinchu (TW)]]

==MEMORY DEVICE WITH SELECTIVE PRECHARGING - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18362662 titled 'MEMORY DEVICE WITH SELECTIVE PRECHARGING

==Simplified Explanation==

The memory device described in the patent application precharges column signal lines to different voltage levels based on whether the associated memory cells are to be accessed or not.

* Memory cells are connected to column signal lines and word signal lines.
* Column signal lines are precharged to a first voltage level for memory cells to be accessed and a second, lower voltage level for memory cells not to be accessed.
* This precharging mechanism helps in efficient access and retrieval of data from memory cells.

== Potential Applications ==
* This technology can be used in various electronic devices such as smartphones, computers, and servers to improve memory access speed and efficiency.

== Problems Solved ==
* Helps in reducing power consumption by precharging only the necessary column signal lines.
* Enhances memory access speed by precharging the column signal lines appropriately.

== Benefits ==
* Improved performance and efficiency in memory access.
* Reduced power consumption leading to longer battery life in portable devices.


==Original Abstract Submitted==

A memory device includes memory cells operably connected to column signal lines and to word signal lines. The column signal lines associated with one or more memory cells to be accessed (e.g., read) are precharged to a first voltage level. The column signal lines not associated with the one or more memory cells to be accessed are precharged to a second voltage level, where the second voltage level is less than the first voltage level.



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