View source for 18358727. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION simplified abstract (SanDisk Technologies LLC)

=THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION=


==Organization Name==

[[:Category:SanDisk Technologies LLC|SanDisk Technologies LLC]]


[[Category:SanDisk Technologies LLC]]

==Inventor(s)==

[[:Category:Ruogu Matthew Zhu of San Jose CA (US)|Ruogu Matthew Zhu of San Jose CA (US)]][[Category:Ruogu Matthew Zhu of San Jose CA (US)]]

[[:Category:Koichi Matsuno of Fremont CA (US)|Koichi Matsuno of Fremont CA (US)]][[Category:Koichi Matsuno of Fremont CA (US)]]

[[:Category:Seyyed Ehsan Esfahani Rashidi of Milpitas CA (US)|Seyyed Ehsan Esfahani Rashidi of Milpitas CA (US)]][[Category:Seyyed Ehsan Esfahani Rashidi of Milpitas CA (US)]]

[[:Category:Jixin Yu of Milpitas CA (US)|Jixin Yu of Milpitas CA (US)]][[Category:Jixin Yu of Milpitas CA (US)]]

[[:Category:Johann Alsmeier of San Jose CA (US)|Johann Alsmeier of San Jose CA (US)]][[Category:Johann Alsmeier of San Jose CA (US)]]

==THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18358727 titled 'THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION

The memory device described in the patent application consists of alternating stacks of insulating layers and electrically conductive layers, with memory stack structures vertically extending through these stacks.

* The layer contact via structure contacts the top surface of one of the electrically conductive layers and is surrounded laterally by at least one dielectric spacer, which may include multiple dielectric spacers, and optionally by several dielectric support pillar structures.
* The layer contact via structure may also feature a convex surface segment adjoined to a straight sidewall segment.

Potential Applications:
* This technology could be used in various memory devices, such as flash drives, solid-state drives, and other electronic storage devices.
* It may also find applications in advanced computing systems and data centers for improved memory performance.

Problems Solved:
* The innovation addresses the need for efficient memory devices with enhanced performance and reliability.
* It solves challenges related to data storage and retrieval in modern electronic devices.

Benefits:
* Improved memory device performance and reliability.
* Enhanced data storage capabilities in electronic devices.
* Potential for increased speed and efficiency in computing systems.

Commercial Applications:
* The technology could be valuable for memory device manufacturers looking to enhance the performance of their products.
* It may have significant market implications in the electronics industry, particularly in the development of faster and more reliable storage solutions.

Questions about the Technology:
1. How does the layer contact via structure improve the performance of memory devices?
2. What are the potential implications of this innovation for the data storage industry?

Frequently Updated Research:
There may be ongoing research in the field of memory devices and semiconductor technology that could impact the development and application of this technology. It is important to stay informed about the latest advancements in the field to fully understand the potential of this innovation.


==Original Abstract Submitted==

A memory device includes at least one alternating stack of respective insulating layers and respective electrically conductive layers and memory stack structures vertically extending through the at least one alternating stack. A layer contact via structure contacts a top surface of one of the electrically conductive layers, and is laterally surrounded by at least one dielectric spacer, which may include a plurality of dielectric spacers, and optionally by a plurality of dielectric support pillar structures. Additionally or alternatively, the layer contact via structure may comprise a convex surface segment that is adjoined to a straight sidewall segment.



[[Category:H10B43/27]]
[[Category:H01L23/00]]
[[Category:H01L25/00]]
[[Category:H01L25/065]]
[[Category:H01L25/18]]
[[Category:H10B41/27]]
[[Category:H10B80/00]]
[[Category:CPC_H10B43/27]]