View source for 18356035. SEMICONDUCTOR DEVICES INCLUDING BONDED SEMICONDUCTOR LAYERS AND MANUFACTURING METHODS OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICES INCLUDING BONDED SEMICONDUCTOR LAYERS AND MANUFACTURING METHODS OF THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Byeongchan Kim of Suwon-si (KR)|Byeongchan Kim of Suwon-si (KR)]][[Category:Byeongchan Kim of Suwon-si (KR)]]

[[:Category:Un-Byoung Kang of Suwon-si (KR)|Un-Byoung Kang of Suwon-si (KR)]][[Category:Un-Byoung Kang of Suwon-si (KR)]]

[[:Category:Jumyong Park of Suwon-si (KR)|Jumyong Park of Suwon-si (KR)]][[Category:Jumyong Park of Suwon-si (KR)]]

[[:Category:Dongjoon Oh of Suwon-si (KR)|Dongjoon Oh of Suwon-si (KR)]][[Category:Dongjoon Oh of Suwon-si (KR)]]

[[:Category:Jun Young Oh of Suwon-si (KR)|Jun Young Oh of Suwon-si (KR)]][[Category:Jun Young Oh of Suwon-si (KR)]]

[[:Category:Jeongil Lee of Suwon-si (KR)|Jeongil Lee of Suwon-si (KR)]][[Category:Jeongil Lee of Suwon-si (KR)]]

[[:Category:Chungsun Lee of Suwon-si (KR)|Chungsun Lee of Suwon-si (KR)]][[Category:Chungsun Lee of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICES INCLUDING BONDED SEMICONDUCTOR LAYERS AND MANUFACTURING METHODS OF THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18356035 titled 'SEMICONDUCTOR DEVICES INCLUDING BONDED SEMICONDUCTOR LAYERS AND MANUFACTURING METHODS OF THE SAME

==Simplified Explanation==

The semiconductor device described in the abstract includes a semiconductor layer with a wire and an electrical element, as well as multiple metal pads on the surface of the semiconductor layer, with one being smaller in size than the other and located between two regions with different surface metal densities.

* The semiconductor device includes a semiconductor layer with a wire and an electrical element.
* The device has multiple metal pads on the surface, with one being smaller in size than the other.
* The smaller metal pad is located between two regions with different surface metal densities.

== Potential Applications ==
This technology could be applied in:
* Semiconductor manufacturing
* Electronic devices
* Integrated circuits

== Problems Solved ==
This technology helps in:
* Improving connectivity in semiconductor devices
* Enhancing electrical performance
* Reducing signal interference

== Benefits ==
The benefits of this technology include:
* Enhanced device reliability
* Improved signal transmission
* Increased efficiency in electronic devices

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Consumer electronics
* Telecommunications industry
* Automotive sector

== Possible Prior Art ==
One possible prior art could be the use of metal pads in semiconductor devices for electrical connections.

=== Unanswered Questions ===

=== How does the size difference between the metal pads affect the overall performance of the semiconductor device? ===
The abstract does not provide information on how the size difference between the metal pads impacts the functionality or efficiency of the semiconductor device.

=== What specific electrical element is integrated into the semiconductor layer? ===
The abstract does not specify the type or nature of the electrical element integrated into the semiconductor layer.


==Original Abstract Submitted==

A semiconductor device includes: a semiconductor layer including a wire and an electrical element; and a plurality of metal pads on a surface of the semiconductor layer, wherein the plurality of metal pads includes a first metal pad and a second metal pad, wherein the second metal pad is smaller in surface area or diameter on the surface of the semiconductor layer than the first metal pad, and wherein the second metal pad is between a first region of the surface of the semiconductor layer where the first metal pad is and a second region of the surface of the semiconductor layer where a surface metal density is zero (0).



[[Category:H01L25/10]]
[[Category:H01L23/00]]
[[Category:H01L23/498]]